Issued Patents 2021
Showing 26–48 of 48 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11063131 | Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering | Nazila Haratipour, Sou-Chi Chang, Chia-Ching Lin, Uygar E. Avci, Ian A. Young | 2021-07-13 |
| 11049773 | Art trench spacers to enable fin release for non-lattice matched channels | Gilbert Dewey, Matthew V. Metz, Sean T. Ma, Cheng-Ying Huang, Tahir Ghani +4 more | 2021-06-29 |
| 11031499 | Germanium transistor structure with underlap tip to reduce gate induced barrier lowering/short channel effect while minimizing impact on drive current | Willy Rachmady, Van H. Le, Matthew V. Metz, Benjamin Chu-Kung, Ashish Agrawal | 2021-06-08 |
| 11031503 | Non-planar gate thin film transistor | Abhishek A. Sharma, Van H. Le, Gilbert Dewey, Rafael Rios, Yih Wang +1 more | 2021-06-08 |
| 11024713 | Gradient doping to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Glenn A. Glass, Harold W. Kennel, Ashish Agrawal +3 more | 2021-06-01 |
| 11024714 | Nanowire transistor fabrication with hardmask layers | Seung Hoon Sung, Seiyon Kim, Kelin J. Kuhn, Willy Rachmady | 2021-06-01 |
| 11017843 | Thin film transistors for memory cell array layer selection | Abhishek A. Sharma, Gilbert Dewey, Willy Rachmady, Van H. Le, Matthew V. Metz | 2021-05-25 |
| 11011550 | Self-aligned top-gated non-planar oxide semiconductor thin film transistors | Van H. Le, Abhishek A. Sharma, Gilbert Dewey, Ravi Pillarisetty, Shriram Shivaraman +1 more | 2021-05-18 |
| 11004954 | Epitaxial buffer to reduce sub-channel leakage in MOS transistors | Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2021-05-11 |
| 10998270 | Local interconnect for group IV source/drain regions | Seung Hoon Sung, Glenn A. Glass, Van H. Le, Ashish Agrawal, Benjamin Chu-Kung +1 more | 2021-05-04 |
| 10985263 | Thin film cap to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Ashish Agrawal, Van H. Le, Benjamin Chu-Kung +4 more | 2021-04-20 |
| 10964701 | Vertical shared gate thin-film transistor-based charge storage memory | Abhishek A. Sharma, Van H. Le, Gilbert Dewey, Rafael Rios, Yih Wang +1 more | 2021-03-30 |
| 10964820 | Vertical transistor devices and techniques | Ravi Pillarisetty, Abhishek A. Sharma, Van H. Le, Gilbert Dewey | 2021-03-30 |
| 10957769 | High-mobility field effect transistors with wide bandgap fin cladding | Sean T. Ma, Chandra S. Mohapatra, Gilbert Dewey, Willy Rachmady, Harold W. Kennel +3 more | 2021-03-23 |
| 10950301 | Two transistor, one resistor non-volatile gain cell memory and storage element | Rafael Rios, Abhishek A. Sharma, Van H. Le, Gilbert Dewey | 2021-03-16 |
| 10950733 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2021-03-16 |
| 10937907 | Method for fabricating transistor with thinned channel | Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more | 2021-03-02 |
| 10930738 | Sub-fin leakage control in semicondcutor devices | Dipanjan Basu, Seung Hoon Sung, Glenn A. Glass, Tahir Ghani | 2021-02-23 |
| 10930791 | Systems, methods, and apparatuses for implementing bi-layer semiconducting oxides in source and drain for low access and contact resistance of thin film transistors | Gilbert Dewey, Van H. Le, Rafael Rios, Shriram Shivaraman, Marko Radosavljevic | 2021-02-23 |
| 10930766 | Ge NANO wire transistor with GAAS as the sacrificial layer | Willy Rachmady, Matthew V. Metz, Van H. Le, Sanaz K. Gardner | 2021-02-23 |
| 10903364 | Semiconductor device with released source and drain | Willy Rachmady, Sanaz K. Gardner, Chandra S. Mohapatra, Matthew V. Metz, Gilbert Dewey +3 more | 2021-01-26 |
| 10892335 | Device isolation by fixed charge | Sean T. Ma, Willy Rachmady, Gilbert Dewey, Aaron D. Lilak, Justin R. Weber +5 more | 2021-01-12 |
| 10886408 | Group III-V material transistors employing nitride-based dopant diffusion barrier layer | Chandra S. Mohapatra, Harold W. Kennel, Glenn A. Glass, Willy Rachmady, Anand S. Murthy +4 more | 2021-01-05 |