| 11205707 |
Optimizing gate profile for performance and gate fill |
Nadia M. Rahhal-Orabi, Tahir Ghani, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros +2 more |
2021-12-21 |
$33,282,000 |
| 11195919 |
Method of fabricating a semiconductor device with strained SiGe fins and a Si cladding layer |
Stephen M. Cea, Roza Kotlyar, Harold W. Kennel, Glenn A. Glass, Kelin J. Kuhn +1 more |
2021-12-07 |
$28,128,000 |
| 11189730 |
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors |
Glenn A. Glass, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more |
2021-11-30 |
$30,212,000 |
| 11177255 |
Transistor structures having multiple threshold voltage channel materials |
Sean T. Ma, Willy Rachmady, Gilbert Dewey, Matthew V. Metz, Harold W. Kennel +3 more |
2021-11-16 |
$23,453,000 |
| 11171057 |
Semiconductor fin design to mitigate fin collapse |
Glenn A. Glass, Chytra Pawashe, Daniel Pantuso, Tahir Ghani |
2021-11-09 |
$28,241,000 |
| 11171207 |
Transistor with isolation below source and drain |
Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Nicholas G. Minutillo, Sean T. Ma +3 more |
2021-11-09 |
$28,241,000 |
| 11171058 |
Self-aligned 3-D epitaxial structures for MOS device fabrication |
Glenn A. Glass, Daniel B. Aubertine, Gaurav Thareja, Tahir Ghani |
2021-11-09 |
$28,241,000 |
| 11164785 |
Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain material |
Ashish Agrawal, Gilbert Dewey, Cheng-Ying Huang, Willy Rachmady, Ryan Keech +1 more |
2021-11-02 |
$26,002,000 |
| 11164747 |
Group III-V semiconductor devices having asymmetric source and drain structures |
Sean T. Ma, Gilbert Dewey, Willy Rachmady, Harold W. Kennel, Cheng-Ying Huang +3 more |
2021-11-02 |
$26,002,000 |
| 11152361 |
Techniques for achieving multiple transistor fin dimensions on a single die |
Glenn A. Glass |
2021-10-19 |
$36,352,000 |
| 11121030 |
Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch |
Glenn A. Glass, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +1 more |
2021-09-14 |
$31,644,000 |
| 11107920 |
Methods of forming dislocation enhanced strain in NMOS structures |
Michael Jackson, Glenn A. Glass, Saurabh Morarka, Chandra S. Mohapatra |
2021-08-31 |
$22,590,000 |
| 11107890 |
FINFET transistor having a doped subfin structure to reduce channel to substrate leakage |
Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Chandra S. Mohapatra, Tahir Ghani +2 more |
2021-08-31 |
$22,590,000 |
| 11101350 |
Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements |
Glenn A. Glass, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +2 more |
2021-08-24 |
$32,164,000 |
| 11101356 |
Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors |
Glenn A. Glass, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more |
2021-08-24 |
$32,164,000 |
| 11101268 |
Transistors employing non-selective deposition of source/drain material |
Karthik Jambunathan, Scott Maddox, Ritesh Jhaveri, Pratik A. Patel, Szuya S. Liao +1 more |
2021-08-24 |
$32,164,000 |
| 11094785 |
Deuterium-based passivation of non-planar transistor interfaces |
Prashant Majhi, Glenn A. Glass, Tahir Ghani, Aravind S. Killampalli, Mark R. Brazier +1 more |
2021-08-17 |
$29,127,000 |
| 11081570 |
Transistors with lattice matched gate structure |
Karthik Jambunathan, Glenn A. Glass, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more |
2021-08-03 |
$25,424,000 |
| 11069795 |
Transistors with channel and sub-channel regions with distinct compositions and dimensions |
Karthik Jambunathan, Glenn A. Glass, Jun Sung Kang, Bruce Beattie, Anupama Bowonder +3 more |
2021-07-20 |
$44,320,000 |
| 11056592 |
Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer |
Karthik Jambunathan, Cory Bomberger, Glenn A. Glass, Ju H. Nam, Tahir Ghani |
2021-07-06 |
$31,309,000 |
| 11049773 |
Art trench spacers to enable fin release for non-lattice matched channels |
Gilbert Dewey, Matthew V. Metz, Sean T. Ma, Cheng-Ying Huang, Tahir Ghani +4 more |
2021-06-29 |
$34,663,000 |
| 11024737 |
Etching fin core to provide fin doubling |
Chandra S. Mohapatra, Glenn A. Glass, Karthik Jambunathan |
2021-06-01 |
$35,542,000 |
| 11024713 |
Gradient doping to lower leakage in low band gap material devices |
Seung Hoon Sung, Dipanjan Basu, Glenn A. Glass, Harold W. Kennel, Ashish Agrawal +3 more |
2021-06-01 |
$35,542,000 |
| 11011620 |
Techniques for increasing channel region tensile strain in n-MOS devices |
Rishabh Mehandru, Cory E. Weber, Karthik Jambunathan, Glenn A. Glass, Jiong Zhang +2 more |
2021-05-18 |
$44,170,000 |
| 11004954 |
Epitaxial buffer to reduce sub-channel leakage in MOS transistors |
Karthik Jambunathan, Glenn A. Glass, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more |
2021-05-11 |
$38,242,000 |
