| 11189730 |
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Tahir Ghani, Jack T. Kavalieros +3 more |
2021-11-30 |
| 11164785 |
Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain material |
Ashish Agrawal, Gilbert Dewey, Cheng-Ying Huang, Willy Rachmady, Anand S. Murthy +1 more |
2021-11-02 |
| 11101356 |
Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Tahir Ghani, Jack T. Kavalieros +3 more |
2021-08-24 |
| 11056592 |
Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer |
Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Ju H. Nam, Tahir Ghani |
2021-07-06 |