Issued Patents 2021
Showing 1–4 of 4 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11189730 | Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Tahir Ghani, Jack T. Kavalieros +3 more | 2021-11-30 |
| 11164785 | Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain material | Ashish Agrawal, Gilbert Dewey, Cheng-Ying Huang, Willy Rachmady, Anand S. Murthy +1 more | 2021-11-02 |
| 11101356 | Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Tahir Ghani, Jack T. Kavalieros +3 more | 2021-08-24 |
| 11056592 | Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer | Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Ju H. Nam, Tahir Ghani | 2021-07-06 |