| 11189730 |
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors |
Glenn A. Glass, Anand S. Murthy, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more |
2021-11-30 |
| 11121030 |
Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch |
Glenn A. Glass, Anand S. Murthy, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +1 more |
2021-09-14 |
| 11101356 |
Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors |
Glenn A. Glass, Anand S. Murthy, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more |
2021-08-24 |
| 11101350 |
Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements |
Glenn A. Glass, Anand S. Murthy, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +2 more |
2021-08-24 |
| 11101268 |
Transistors employing non-selective deposition of source/drain material |
Scott Maddox, Ritesh Jhaveri, Pratik A. Patel, Szuya S. Liao, Anand S. Murthy +1 more |
2021-08-24 |
| 11081570 |
Transistors with lattice matched gate structure |
Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more |
2021-08-03 |
| 11069795 |
Transistors with channel and sub-channel regions with distinct compositions and dimensions |
Glenn A. Glass, Anand S. Murthy, Jun Sung Kang, Bruce Beattie, Anupama Bowonder +3 more |
2021-07-20 |
| 11056592 |
Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer |
Cory Bomberger, Glenn A. Glass, Anand S. Murthy, Ju H. Nam, Tahir Ghani |
2021-07-06 |
| 11024737 |
Etching fin core to provide fin doubling |
Chandra S. Mohapatra, Glenn A. Glass, Anand S. Murthy |
2021-06-01 |
| 11011620 |
Techniques for increasing channel region tensile strain in n-MOS devices |
Rishabh Mehandru, Cory E. Weber, Anand S. Murthy, Glenn A. Glass, Jiong Zhang +2 more |
2021-05-18 |
| 11004978 |
Methods of forming doped source/drain contacts and structures formed thereby |
Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Seiyon Kim |
2021-05-11 |
| 11004954 |
Epitaxial buffer to reduce sub-channel leakage in MOS transistors |
Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more |
2021-05-11 |
| 10944006 |
Geometry tuning of fin based transistor |
Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Hei Kam, Nabil G. Mistkawi +2 more |
2021-03-09 |
| 10892337 |
Backside source/drain replacement for semiconductor devices with metallization on both sides |
Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Patrick Morrow, Mauro J. Kobrinsky |
2021-01-12 |