Issued Patents 2021
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11189730 | Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors | Glenn A. Glass, Anand S. Murthy, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2021-11-30 |
| 11121030 | Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch | Glenn A. Glass, Anand S. Murthy, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +1 more | 2021-09-14 |
| 11101356 | Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors | Glenn A. Glass, Anand S. Murthy, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2021-08-24 |
| 11101350 | Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements | Glenn A. Glass, Anand S. Murthy, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +2 more | 2021-08-24 |
| 11101268 | Transistors employing non-selective deposition of source/drain material | Scott Maddox, Ritesh Jhaveri, Pratik A. Patel, Szuya S. Liao, Anand S. Murthy +1 more | 2021-08-24 |
| 11081570 | Transistors with lattice matched gate structure | Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2021-08-03 |
| 11069795 | Transistors with channel and sub-channel regions with distinct compositions and dimensions | Glenn A. Glass, Anand S. Murthy, Jun Sung Kang, Bruce Beattie, Anupama Bowonder +3 more | 2021-07-20 |
| 11056592 | Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer | Cory Bomberger, Glenn A. Glass, Anand S. Murthy, Ju H. Nam, Tahir Ghani | 2021-07-06 |
| 11024737 | Etching fin core to provide fin doubling | Chandra S. Mohapatra, Glenn A. Glass, Anand S. Murthy | 2021-06-01 |
| 11011620 | Techniques for increasing channel region tensile strain in n-MOS devices | Rishabh Mehandru, Cory E. Weber, Anand S. Murthy, Glenn A. Glass, Jiong Zhang +2 more | 2021-05-18 |
| 11004978 | Methods of forming doped source/drain contacts and structures formed thereby | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Seiyon Kim | 2021-05-11 |
| 11004954 | Epitaxial buffer to reduce sub-channel leakage in MOS transistors | Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2021-05-11 |
| 10944006 | Geometry tuning of fin based transistor | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Hei Kam, Nabil G. Mistkawi +2 more | 2021-03-09 |
| 10892337 | Backside source/drain replacement for semiconductor devices with metallization on both sides | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Patrick Morrow, Mauro J. Kobrinsky | 2021-01-12 |