Issued Patents 2021
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11205707 | Optimizing gate profile for performance and gate fill | Nadia M. Rahhal-Orabi, Tahir Ghani, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros +2 more | 2021-12-21 |
| 11107920 | Methods of forming dislocation enhanced strain in NMOS structures | Michael Jackson, Anand S. Murthy, Glenn A. Glass, Saurabh Morarka | 2021-08-31 |
| 11107890 | FINFET transistor having a doped subfin structure to reduce channel to substrate leakage | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Anand S. Murthy, Tahir Ghani +2 more | 2021-08-31 |
| 11024737 | Etching fin core to provide fin doubling | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan | 2021-06-01 |
| 11004978 | Methods of forming doped source/drain contacts and structures formed thereby | Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Seiyon Kim | 2021-05-11 |
| 10957769 | High-mobility field effect transistors with wide bandgap fin cladding | Sean T. Ma, Gilbert Dewey, Willy Rachmady, Harold W. Kennel, Matthew V. Metz +3 more | 2021-03-23 |
| 10944006 | Geometry tuning of fin based transistor | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Hei Kam, Nabil G. Mistkawi +2 more | 2021-03-09 |
| 10903364 | Semiconductor device with released source and drain | Willy Rachmady, Sanaz K. Gardner, Matthew V. Metz, Gilbert Dewey, Sean T. Ma +3 more | 2021-01-26 |
| 10892337 | Backside source/drain replacement for semiconductor devices with metallization on both sides | Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Patrick Morrow, Mauro J. Kobrinsky | 2021-01-12 |
| 10886408 | Group III-V material transistors employing nitride-based dopant diffusion barrier layer | Harold W. Kennel, Glenn A. Glass, Willy Rachmady, Anand S. Murthy, Gilbert Dewey +4 more | 2021-01-05 |