Patent Leaderboard
USPTO Patent Rankings Data through Sept 30, 2025
SM

Sean T. Ma

INIntel: 11 patents #148 of 5,160Top 3%
Portland, OR: #77 of 1,855 inventorsTop 5%
Oregon: #123 of 4,388 inventorsTop 3%
Overall (2021): #6,333 of 548,734Top 2%
11 Patents 2021

Issued Patents 2021

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
11177255 Transistor structures having multiple threshold voltage channel materials Willy Rachmady, Gilbert Dewey, Matthew V. Metz, Harold W. Kennel, Cheng-Ying Huang +3 more 2021-11-16
11171207 Transistor with isolation below source and drain Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Nicholas G. Minutillo, Anand S. Murthy +3 more 2021-11-09
11164747 Group III-V semiconductor devices having asymmetric source and drain structures Gilbert Dewey, Willy Rachmady, Harold W. Kennel, Cheng-Ying Huang, Matthew V. Metz +3 more 2021-11-02
11107890 FINFET transistor having a doped subfin structure to reduce channel to substrate leakage Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Anand S. Murthy, Chandra S. Mohapatra +2 more 2021-08-31
11075119 Vertically stacked transistors in a pin Aaron D. Lilak, Justin R. Weber, Patrick Morrow, Rishabh Mehandru 2021-07-27
11049773 Art trench spacers to enable fin release for non-lattice matched channels Gilbert Dewey, Matthew V. Metz, Cheng-Ying Huang, Tahir Ghani, Anand S. Murthy +4 more 2021-06-29
10957769 High-mobility field effect transistors with wide bandgap fin cladding Chandra S. Mohapatra, Gilbert Dewey, Willy Rachmady, Harold W. Kennel, Matthew V. Metz +3 more 2021-03-23
10903364 Semiconductor device with released source and drain Willy Rachmady, Sanaz K. Gardner, Chandra S. Mohapatra, Matthew V. Metz, Gilbert Dewey +3 more 2021-01-26
10892335 Device isolation by fixed charge Willy Rachmady, Gilbert Dewey, Aaron D. Lilak, Justin R. Weber, Harold W. Kennel +5 more 2021-01-12
10892326 Removal of a bottom-most nanowire from a nanowire device stack Aaron D. Lilak, Patrick H. Keys, Stephen M. Cea, Rishabh Mehandru 2021-01-12
10886408 Group III-V material transistors employing nitride-based dopant diffusion barrier layer Chandra S. Mohapatra, Harold W. Kennel, Glenn A. Glass, Willy Rachmady, Anand S. Murthy +4 more 2021-01-05