| 11195919 |
Method of fabricating a semiconductor device with strained SiGe fins and a Si cladding layer |
Stephen M. Cea, Roza Kotlyar, Harold W. Kennel, Anand S. Murthy, Kelin J. Kuhn +1 more |
2021-12-07 |
$28,128,000 |
| 11189730 |
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors |
Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more |
2021-11-30 |
$30,212,000 |
| 11171058 |
Self-aligned 3-D epitaxial structures for MOS device fabrication |
Daniel B. Aubertine, Anand S. Murthy, Gaurav Thareja, Tahir Ghani |
2021-11-09 |
$28,241,000 |
| 11171057 |
Semiconductor fin design to mitigate fin collapse |
Chytra Pawashe, Anand S. Murthy, Daniel Pantuso, Tahir Ghani |
2021-11-09 |
$28,241,000 |
| 11152361 |
Techniques for achieving multiple transistor fin dimensions on a single die |
Anand S. Murthy |
2021-10-19 |
$36,352,000 |
| 11121030 |
Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch |
Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +1 more |
2021-09-14 |
$31,644,000 |
| 11107920 |
Methods of forming dislocation enhanced strain in NMOS structures |
Michael Jackson, Anand S. Murthy, Saurabh Morarka, Chandra S. Mohapatra |
2021-08-31 |
$22,590,000 |
| 11101350 |
Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements |
Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +2 more |
2021-08-24 |
$32,164,000 |
| 11101356 |
Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors |
Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more |
2021-08-24 |
$32,164,000 |
| 11094785 |
Deuterium-based passivation of non-planar transistor interfaces |
Prashant Majhi, Anand S. Murthy, Tahir Ghani, Aravind S. Killampalli, Mark R. Brazier +1 more |
2021-08-17 |
$29,127,000 |
| 11081570 |
Transistors with lattice matched gate structure |
Karthik Jambunathan, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more |
2021-08-03 |
$25,424,000 |
| 11069795 |
Transistors with channel and sub-channel regions with distinct compositions and dimensions |
Karthik Jambunathan, Anand S. Murthy, Jun Sung Kang, Bruce Beattie, Anupama Bowonder +3 more |
2021-07-20 |
$44,320,000 |
| 11056592 |
Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer |
Karthik Jambunathan, Cory Bomberger, Anand S. Murthy, Ju H. Nam, Tahir Ghani |
2021-07-06 |
$31,309,000 |
| 11024737 |
Etching fin core to provide fin doubling |
Chandra S. Mohapatra, Anand S. Murthy, Karthik Jambunathan |
2021-06-01 |
$35,542,000 |
| 11024713 |
Gradient doping to lower leakage in low band gap material devices |
Seung Hoon Sung, Dipanjan Basu, Harold W. Kennel, Ashish Agrawal, Benjamin Chu-Kung +3 more |
2021-06-01 |
$35,542,000 |
| 11011620 |
Techniques for increasing channel region tensile strain in n-MOS devices |
Rishabh Mehandru, Cory E. Weber, Anand S. Murthy, Karthik Jambunathan, Jiong Zhang +2 more |
2021-05-18 |
$44,170,000 |
| 11004978 |
Methods of forming doped source/drain contacts and structures formed thereby |
Karthik Jambunathan, Anand S. Murthy, Chandra S. Mohapatra, Seiyon Kim |
2021-05-11 |
$38,242,000 |
| 11004954 |
Epitaxial buffer to reduce sub-channel leakage in MOS transistors |
Karthik Jambunathan, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more |
2021-05-11 |
$38,242,000 |
| 10998270 |
Local interconnect for group IV source/drain regions |
Seung Hoon Sung, Van H. Le, Ashish Agrawal, Benjamin Chu-Kung, Anand S. Murthy +1 more |
2021-05-04 |
$37,420,000 |
| 10985263 |
Thin film cap to lower leakage in low band gap material devices |
Seung Hoon Sung, Dipanjan Basu, Ashish Agrawal, Van H. Le, Benjamin Chu-Kung +4 more |
2021-04-20 |
$53,056,000 |
| 10978568 |
Passivation of transistor channel region interfaces |
Mark R. Brazier, Anand S. Murthy, Tahir Ghani, Owen Loh |
2021-04-13 |
$58,007,000 |
| 10944006 |
Geometry tuning of fin based transistor |
Anand S. Murthy, Karthik Jambunathan, Chandra S. Mohapatra, Hei Kam, Nabil G. Mistkawi +2 more |
2021-03-09 |
$45,039,000 |
| 10930738 |
Sub-fin leakage control in semicondcutor devices |
Dipanjan Basu, Seung Hoon Sung, Jack T. Kavalieros, Tahir Ghani |
2021-02-23 |
$31,062,000 |
| 10892337 |
Backside source/drain replacement for semiconductor devices with metallization on both sides |
Karthik Jambunathan, Anand S. Murthy, Chandra S. Mohapatra, Patrick Morrow, Mauro J. Kobrinsky |
2021-01-12 |
$55,416,000 |
| 10886408 |
Group III-V material transistors employing nitride-based dopant diffusion barrier layer |
Chandra S. Mohapatra, Harold W. Kennel, Willy Rachmady, Anand S. Murthy, Gilbert Dewey +4 more |
2021-01-05 |
$27,050,000 |
