| 11195924 |
Broken bandgap contact |
Van H. Le, Jack T. Kavalieros, Willy Rachmady, Matthew V. Metz, Ashish Agrawal +1 more |
2021-12-07 |
| 11189730 |
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani +3 more |
2021-11-30 |
| 11189733 |
Thin-film transistors with low contact resistance |
Abhishek A. Sharma, Van H. Le, Li Huey Tan, Tristan A. Tronic, Jack T. Kavalieros +1 more |
2021-11-30 |
| 11183594 |
Dual gate control for trench shaped thin film transistors |
Abhishek A. Sharma, Van H. Le, Gilbert Dewey, Jack T. Kavalieros, Shriram Shivaraman +2 more |
2021-11-23 |
| 11177376 |
III-N epitaxial device structures on free standing silicon mesas |
Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Marko Radosavljevic, Seung Hoon Sung +1 more |
2021-11-16 |
| 11158711 |
Air gap for thin film transistors |
Abhishek A. Sharma, Van H. Le, Li Huey Tan, Tristan A. Tronic |
2021-10-26 |
| 11152290 |
Wide bandgap group IV subfin to reduce leakage |
Van H. Le, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros, Ashish Agrawal +1 more |
2021-10-19 |
| 11121030 |
Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Seung Hoon Sung, Jack T. Kavalieros +1 more |
2021-09-14 |
| 11101356 |
Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani +3 more |
2021-08-24 |
| 11101350 |
Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Seung Hoon Sung, Jack T. Kavalieros +2 more |
2021-08-24 |
| 11081570 |
Transistors with lattice matched gate structure |
Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung +1 more |
2021-08-03 |
| 11031499 |
Germanium transistor structure with underlap tip to reduce gate induced barrier lowering/short channel effect while minimizing impact on drive current |
Willy Rachmady, Van H. Le, Matthew V. Metz, Ashish Agrawal, Jack T. Kavalieros |
2021-06-08 |
| 11024713 |
Gradient doping to lower leakage in low band gap material devices |
Seung Hoon Sung, Dipanjan Basu, Glenn A. Glass, Harold W. Kennel, Ashish Agrawal +3 more |
2021-06-01 |
| 11004954 |
Epitaxial buffer to reduce sub-channel leakage in MOS transistors |
Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung +1 more |
2021-05-11 |
| 10998270 |
Local interconnect for group IV source/drain regions |
Seung Hoon Sung, Glenn A. Glass, Van H. Le, Ashish Agrawal, Anand S. Murthy +1 more |
2021-05-04 |
| 10985263 |
Thin film cap to lower leakage in low band gap material devices |
Seung Hoon Sung, Dipanjan Basu, Ashish Agrawal, Van H. Le, Harold W. Kennel +4 more |
2021-04-20 |
| 10950733 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2021-03-16 |
| 10930500 |
Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung +2 more |
2021-02-23 |
