Issued Patents 2021
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11195924 | Broken bandgap contact | Van H. Le, Jack T. Kavalieros, Willy Rachmady, Matthew V. Metz, Ashish Agrawal +1 more | 2021-12-07 |
| 11189730 | Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani +3 more | 2021-11-30 |
| 11189733 | Thin-film transistors with low contact resistance | Abhishek A. Sharma, Van H. Le, Li Huey Tan, Tristan A. Tronic, Jack T. Kavalieros +1 more | 2021-11-30 |
| 11183594 | Dual gate control for trench shaped thin film transistors | Abhishek A. Sharma, Van H. Le, Gilbert Dewey, Jack T. Kavalieros, Shriram Shivaraman +2 more | 2021-11-23 |
| 11177376 | III-N epitaxial device structures on free standing silicon mesas | Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Marko Radosavljevic, Seung Hoon Sung +1 more | 2021-11-16 |
| 11158711 | Air gap for thin film transistors | Abhishek A. Sharma, Van H. Le, Li Huey Tan, Tristan A. Tronic | 2021-10-26 |
| 11152290 | Wide bandgap group IV subfin to reduce leakage | Van H. Le, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros, Ashish Agrawal +1 more | 2021-10-19 |
| 11121030 | Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Seung Hoon Sung, Jack T. Kavalieros +1 more | 2021-09-14 |
| 11101356 | Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani +3 more | 2021-08-24 |
| 11101350 | Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Seung Hoon Sung, Jack T. Kavalieros +2 more | 2021-08-24 |
| 11081570 | Transistors with lattice matched gate structure | Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung +1 more | 2021-08-03 |
| 11031499 | Germanium transistor structure with underlap tip to reduce gate induced barrier lowering/short channel effect while minimizing impact on drive current | Willy Rachmady, Van H. Le, Matthew V. Metz, Ashish Agrawal, Jack T. Kavalieros | 2021-06-08 |
| 11024713 | Gradient doping to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Glenn A. Glass, Harold W. Kennel, Ashish Agrawal +3 more | 2021-06-01 |
| 11004954 | Epitaxial buffer to reduce sub-channel leakage in MOS transistors | Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung +1 more | 2021-05-11 |
| 10998270 | Local interconnect for group IV source/drain regions | Seung Hoon Sung, Glenn A. Glass, Van H. Le, Ashish Agrawal, Anand S. Murthy +1 more | 2021-05-04 |
| 10985263 | Thin film cap to lower leakage in low band gap material devices | Seung Hoon Sung, Dipanjan Basu, Ashish Agrawal, Van H. Le, Harold W. Kennel +4 more | 2021-04-20 |
| 10950733 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2021-03-16 |
| 10930500 | Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung +2 more | 2021-02-23 |