Issued Patents 2021
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11195924 | Broken bandgap contact | Benjamin Chu-Kung, Van H. Le, Jack T. Kavalieros, Willy Rachmady, Matthew V. Metz +1 more | 2021-12-07 |
| 11195944 | Gallium nitride (GaN) transistor structures on a substrate | Han Wui Then, Sansaptak Dasgupta, Sanaz K. Gardner, Marko Radosavljevic, Robert S. Chau | 2021-12-07 |
| 11189730 | Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani +3 more | 2021-11-30 |
| 11177376 | III-N epitaxial device structures on free standing silicon mesas | Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Marko Radosavljevic, Benjamin Chu-Kung +1 more | 2021-11-16 |
| 11171243 | Transistor structures with a metal oxide contact buffer | Gilbert Dewey, Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Shriram Shivaraman +4 more | 2021-11-09 |
| 11152290 | Wide bandgap group IV subfin to reduce leakage | Benjamin Chu-Kung, Van H. Le, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros +1 more | 2021-10-19 |
| 11145763 | Vertical switching device with self-aligned contact | Ravi Pillarisetty, Prashant Majhi, Willy Rachmady, Gilbert Dewey, Abhishek A. Sharma +2 more | 2021-10-12 |
| 11121030 | Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Jack T. Kavalieros +1 more | 2021-09-14 |
| 11114556 | Gate stack design for GaN e-mode transistor performance | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner | 2021-09-07 |
| 11101350 | Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Jack T. Kavalieros +2 more | 2021-08-24 |
| 11101356 | Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani +3 more | 2021-08-24 |
| 11094716 | Source contact and channel interface to reduce body charging from band-to-band tunneling | Dipanjan Basu, Rishabh Mehandru | 2021-08-17 |
| 11081570 | Transistors with lattice matched gate structure | Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Benjamin Chu-Kung +1 more | 2021-08-03 |
| 11031305 | Laterally adjacent and diverse group III-N transistors | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner | 2021-06-08 |
| 11024713 | Gradient doping to lower leakage in low band gap material devices | Dipanjan Basu, Glenn A. Glass, Harold W. Kennel, Ashish Agrawal, Benjamin Chu-Kung +3 more | 2021-06-01 |
| 11024714 | Nanowire transistor fabrication with hardmask layers | Seiyon Kim, Kelin J. Kuhn, Willy Rachmady, Jack T. Kavalieros | 2021-06-01 |
| 11004954 | Epitaxial buffer to reduce sub-channel leakage in MOS transistors | Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Benjamin Chu-Kung +1 more | 2021-05-11 |
| 10998270 | Local interconnect for group IV source/drain regions | Glenn A. Glass, Van H. Le, Ashish Agrawal, Benjamin Chu-Kung, Anand S. Murthy +1 more | 2021-05-04 |
| 10985263 | Thin film cap to lower leakage in low band gap material devices | Dipanjan Basu, Ashish Agrawal, Van H. Le, Benjamin Chu-Kung, Harold W. Kennel +4 more | 2021-04-20 |
| 10950733 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Jessica S. Kachian, Jack T. Kavalieros +5 more | 2021-03-16 |
| 10930500 | Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices | Sansaptak Dasgupta, Han Wui Then, Benjamin Chu-Kung, Marko Radosavljevic, Sanaz K. Gardner +2 more | 2021-02-23 |
| 10930738 | Sub-fin leakage control in semicondcutor devices | Dipanjan Basu, Glenn A. Glass, Jack T. Kavalieros, Tahir Ghani | 2021-02-23 |