| 11195924 |
Broken bandgap contact |
Benjamin Chu-Kung, Van H. Le, Jack T. Kavalieros, Willy Rachmady, Matthew V. Metz +1 more |
2021-12-07 |
$28,128,000 |
| 11195944 |
Gallium nitride (GaN) transistor structures on a substrate |
Han Wui Then, Sansaptak Dasgupta, Sanaz K. Gardner, Marko Radosavljevic, Robert S. Chau |
2021-12-07 |
$28,128,000 |
| 11189730 |
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani +3 more |
2021-11-30 |
$30,212,000 |
| 11177376 |
III-N epitaxial device structures on free standing silicon mesas |
Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Marko Radosavljevic, Benjamin Chu-Kung +1 more |
2021-11-16 |
$23,453,000 |
| 11171243 |
Transistor structures with a metal oxide contact buffer |
Gilbert Dewey, Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Shriram Shivaraman +4 more |
2021-11-09 |
$28,241,000 |
| 11152290 |
Wide bandgap group IV subfin to reduce leakage |
Benjamin Chu-Kung, Van H. Le, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros +1 more |
2021-10-19 |
$36,352,000 |
| 11145763 |
Vertical switching device with self-aligned contact |
Ravi Pillarisetty, Prashant Majhi, Willy Rachmady, Gilbert Dewey, Abhishek A. Sharma +2 more |
2021-10-12 |
$32,982,000 |
| 11121030 |
Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Jack T. Kavalieros +1 more |
2021-09-14 |
$31,644,000 |
| 11114556 |
Gate stack design for GaN e-mode transistor performance |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner |
2021-09-07 |
$31,495,000 |
| 11101350 |
Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Benjamin Chu-Kung, Jack T. Kavalieros +2 more |
2021-08-24 |
$32,164,000 |
| 11101356 |
Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani +3 more |
2021-08-24 |
$32,164,000 |
| 11094716 |
Source contact and channel interface to reduce body charging from band-to-band tunneling |
Dipanjan Basu, Rishabh Mehandru |
2021-08-17 |
$29,127,000 |
| 11081570 |
Transistors with lattice matched gate structure |
Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Benjamin Chu-Kung +1 more |
2021-08-03 |
$25,424,000 |
| 11031305 |
Laterally adjacent and diverse group III-N transistors |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner |
2021-06-08 |
$26,946,000 |
| 11024713 |
Gradient doping to lower leakage in low band gap material devices |
Dipanjan Basu, Glenn A. Glass, Harold W. Kennel, Ashish Agrawal, Benjamin Chu-Kung +3 more |
2021-06-01 |
$35,542,000 |
| 11024714 |
Nanowire transistor fabrication with hardmask layers |
Seiyon Kim, Kelin J. Kuhn, Willy Rachmady, Jack T. Kavalieros |
2021-06-01 |
$1,176,000 |
| 11004954 |
Epitaxial buffer to reduce sub-channel leakage in MOS transistors |
Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Benjamin Chu-Kung +1 more |
2021-05-11 |
$38,242,000 |
| 10998270 |
Local interconnect for group IV source/drain regions |
Glenn A. Glass, Van H. Le, Ashish Agrawal, Benjamin Chu-Kung, Anand S. Murthy +1 more |
2021-05-04 |
$37,420,000 |
| 10985263 |
Thin film cap to lower leakage in low band gap material devices |
Dipanjan Basu, Ashish Agrawal, Van H. Le, Benjamin Chu-Kung, Harold W. Kennel +4 more |
2021-04-20 |
$53,056,000 |
| 10950733 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Jessica S. Kachian, Jack T. Kavalieros +5 more |
2021-03-16 |
$65,644,000 |
| 10930500 |
Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices |
Sansaptak Dasgupta, Han Wui Then, Benjamin Chu-Kung, Marko Radosavljevic, Sanaz K. Gardner +2 more |
2021-02-23 |
$31,062,000 |
| 10930738 |
Sub-fin leakage control in semicondcutor devices |
Dipanjan Basu, Glenn A. Glass, Jack T. Kavalieros, Tahir Ghani |
2021-02-23 |
$31,062,000 |
