| 11211489 |
Low resistance field-effect transistors and methods of manufacturing the same |
Brian S. Doyle, Abhishek A. Sharma, Elijah V. Karpov, Ravi Pillarisetty |
2021-12-28 |
$27,770,000 |
| 11195932 |
Ferroelectric gate dielectrics in integrated circuits |
Abhishek A. Sharma, Brian S. Doyle, Ravi Pillarisetty, Elijah V. Karpov |
2021-12-07 |
$28,128,000 |
| 11195839 |
2S-1C 4F2 cross-point DRAM array |
Ravi Pillarisetty, Abhishek A. Sharma, Elijah V. Karpov, Brian S. Doyle |
2021-12-07 |
$28,128,000 |
| 11195578 |
1S-1C DRAM with a non-volatile CBRAM element |
Ravi Pillarisetty, Abhishek A. Sharma, Brian S. Doyle, Elijah V. Karpov |
2021-12-07 |
$28,128,000 |
| 11171176 |
Asymmetric selector element for low voltage bipolar memory devices |
Abhishek A. Sharma, Elijah V. Karpov, Ravi Pillarisetty, Brian S. Doyle |
2021-11-09 |
$28,241,000 |
| 11152429 |
Threshold switching contact in a field-effect transistor as a selector |
Abhishek A. Sharma, Brian S. Doyle, Ravi Pillarisetty, Elijah V. Karpov |
2021-10-19 |
$36,352,000 |
| 11152482 |
Antiferroelectric gate dielectric transistors and their methods of fabrication |
Ravi Pillarisetty, Brian S. Doyle, Abhishek A. Sharma, Willy Rachmady, Jack T. Kavalieros +1 more |
2021-10-19 |
$36,352,000 |
| 11145763 |
Vertical switching device with self-aligned contact |
Ravi Pillarisetty, Seung Hoon Sung, Willy Rachmady, Gilbert Dewey, Abhishek A. Sharma +2 more |
2021-10-12 |
$32,982,000 |
| 11139401 |
Vertical thin film transistor structures with localized gate dielectric |
Brian S. Doyle, Rami Hourani, Elijah V. Karpov, Ravi Pillarisetty, Abhishek A. Sharma |
2021-10-05 |
$23,463,000 |
| 11114471 |
Thin film transistors having relatively increased width and shared bitlines |
Brian S. Doyle, Abhishek A. Sharma, Ravi Pillarisetty, Elijah V. Karpov |
2021-09-07 |
$31,495,000 |
| 11094785 |
Deuterium-based passivation of non-planar transistor interfaces |
Glenn A. Glass, Anand S. Murthy, Tahir Ghani, Aravind S. Killampalli, Mark R. Brazier +1 more |
2021-08-17 |
$29,127,000 |
| 11075207 |
SRAM using 2T-2S |
Abhishek A. Sharma, Brian S. Doyle, Ravi Pillarisetty |
2021-07-27 |
$27,337,000 |
| 11037916 |
Apparatus with multi-wafer based device comprising embedded active devices and method for forming such |
Anup Pancholi, Paul B. Fischer, Patrick Morrow |
2021-06-15 |
$33,380,000 |
| 11037817 |
Apparatus with multi-wafer based device and method for forming such |
Anup Pancholi, Paul B. Fischer, Patrick Morrow |
2021-06-15 |
$33,380,000 |
| 11031072 |
Dynamic random access memory including threshold switch |
Abhishek A. Sharma, Ravi Pillarisetty, Brian S. Doyle |
2021-06-08 |
$26,946,000 |
| 10923450 |
Memory arrays with bonded and shared logic circuitry |
Richard Fastow, Khaled Hasnat, Owen W. Jungroth, Krishna K. Parat |
2021-02-16 |
$35,223,000 |
| 10910436 |
Asymmetric selectors for memory cells |
Elijah V. Karpov, Ravi Pillarisetty, Niloy Mukherjee |
2021-02-02 |
$28,243,000 |
| 10897009 |
Resistive memory cells and precursors thereof, methods of making the same, and devices including the same |
Niloy Mukherjee, Ravi Pillarisetty, Uday Shah, Ryan E. Arch, Markus Kuhn +6 more |
2021-01-19 |
$115,732,000 |
