| 11211489 |
Low resistance field-effect transistors and methods of manufacturing the same |
Brian S. Doyle, Abhishek A. Sharma, Ravi Pillarisetty, Prashant Majhi |
2021-12-28 |
| 11195932 |
Ferroelectric gate dielectrics in integrated circuits |
Abhishek A. Sharma, Brian S. Doyle, Prashant Majhi, Ravi Pillarisetty |
2021-12-07 |
| 11195839 |
2S-1C 4F2 cross-point DRAM array |
Ravi Pillarisetty, Abhishek A. Sharma, Prashant Majhi, Brian S. Doyle |
2021-12-07 |
| 11195578 |
1S-1C DRAM with a non-volatile CBRAM element |
Ravi Pillarisetty, Abhishek A. Sharma, Brian S. Doyle, Prashant Majhi |
2021-12-07 |
| 11171176 |
Asymmetric selector element for low voltage bipolar memory devices |
Prashant Majhi, Abhishek A. Sharma, Ravi Pillarisetty, Brian S. Doyle |
2021-11-09 |
| 11152429 |
Threshold switching contact in a field-effect transistor as a selector |
Abhishek A. Sharma, Brian S. Doyle, Ravi Pillarisetty, Prashant Majhi |
2021-10-19 |
| 11139401 |
Vertical thin film transistor structures with localized gate dielectric |
Brian S. Doyle, Rami Hourani, Prashant Majhi, Ravi Pillarisetty, Abhishek A. Sharma |
2021-10-05 |
| 11114471 |
Thin film transistors having relatively increased width and shared bitlines |
Brian S. Doyle, Abhishek A. Sharma, Ravi Pillarisetty, Prashant Majhi |
2021-09-07 |
| 10923188 |
Macro storage cell composed of multiple storage devices each capable of storing more than two states |
Ian A. Young, Dmitri E. Nikonov |
2021-02-16 |
| 10910436 |
Asymmetric selectors for memory cells |
Prashant Majhi, Ravi Pillarisetty, Niloy Mukherjee |
2021-02-02 |
| 10897009 |
Resistive memory cells and precursors thereof, methods of making the same, and devices including the same |
Niloy Mukherjee, Ravi Pillarisetty, Prashant Majhi, Uday Shah, Ryan E. Arch +6 more |
2021-01-19 |