Issued Patents 2021
Showing 25 most recent of 33 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11201242 | Structure to enable titanium contact liner on pFET source/drain regions | Keith E. Fogel, Nicole S. Munro, Alexander Reznicek | 2021-12-14 |
| 11189693 | Transistor having reduced contact resistance | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2021-11-30 |
| 11183558 | Nanosheet transistor having partially self-limiting bottom isolation extending into the substrate and under the source/drain and gate regions | Chun-Chen Yeh, Alexander Reznicek, Junli Wang | 2021-11-23 |
| 11152464 | Self-aligned isolation for nanosheet transistor | Balasubramanian S. Pranatharthi Haran, Ruilong Xie, Robert R. Robison | 2021-10-19 |
| 11145551 | FinFET devices | Kangguo Cheng, Theodoras E. Standaert, Junli Wang | 2021-10-12 |
| 11139372 | Dual step etch-back inner spacer formation | Andrew M. Greene, Yao Yao, Ruilong Xie | 2021-10-05 |
| 11139385 | Interface-less contacts to source/drain regions and gate electrode over active portion of device | Junli Wang, Huiming Bu | 2021-10-05 |
| 11121032 | Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2021-09-14 |
| 11094803 | Nanosheet device with tall suspension and tight contacted gate poly-pitch | Ruilong Xie, Julien Frougier, Ardasheir Rahman, Alexander Reznicek | 2021-08-17 |
| 11088280 | Transistor and method of forming same | Nicolas L. Breil, Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2021-08-10 |
| 11081568 | Protective bilayer inner spacer for nanosheet devices | Yao Yao, Ruilong Xie, Andrew M. Greene | 2021-08-03 |
| 11069809 | Soi FinFET fins with recessed fins and epitaxy in source drain region | Alexander Reznicek, Shogo Mochizuki, Nicolas L. Breil, Oleg Gluschenkov | 2021-07-20 |
| 11056399 | Source and drain EPI protective spacer during single diffusion break formation | Yao Yao, Andrew M. Greene, Kangguo Cheng, Zhenxing Bi, Ruilong Xie | 2021-07-06 |
| 11056386 | Two-dimensional (2D) self-aligned contact (or via) to enable further device scaling | Junli Wang, Chun-Chen Yeh, Alexander Reznicek | 2021-07-06 |
| 11043451 | Electrical fuse and/or resistor structures | Kangguo Cheng, Ali Khakifirooz, Juntao Li | 2021-06-22 |
| 11038041 | Composite spacer enabling uniform doping in recessed fin devices | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2021-06-15 |
| 11024536 | Contact interlayer dielectric replacement with improved SAC cap retention | Adra Carr, Vimal Kamineni, Ruilong Xie, Andrew M. Greene, Nigel G. Cave | 2021-06-01 |
| 11011422 | Self-aligned wrap-around trench contacts | — | 2021-05-18 |
| 11011417 | Method and structure of metal cut | Su Chen Fan, Ruilong Xie, Andrew M. Greene | 2021-05-18 |
| 10998242 | Semiconductor device including dual trench epitaxial dual-liner contacts | Kangguo Cheng, Theodoras E. Standaert, Junli Wang | 2021-05-04 |
| 10998234 | Nanosheet bottom isolation and source or drain epitaxial growth | Ruilong Xie, Nicolas Loubet, Balasubramanian Pranatharthiharan | 2021-05-04 |
| 10998230 | Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2021-05-04 |
| 10991796 | Source/drain contact depth control | Lin Hu, Brian J. Greene, Kai Zhao, Daniel Jaeger, Keith H. Tabakman +1 more | 2021-04-27 |
| 10971601 | Replacement metal gate structures | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2021-04-06 |
| 10957761 | Electrical isolation for nanosheet transistor devices | Chun-Chen Yeh, Alexander Reznicek, Junli Wang | 2021-03-23 |