| 11152489 |
Additive core subtractive liner for metal cut etch processes |
Ruqiang Bao, Kisup Chung, Sivananda K. Kanakasabapathy, David L. Rath, Indira Seshadri +1 more |
2021-10-19 |
| 11139372 |
Dual step etch-back inner spacer formation |
Yao Yao, Ruilong Xie, Veeraraghavan S. Basker |
2021-10-05 |
| 11133189 |
Metal cut patterning and etching to minimize interlayer dielectric layer loss |
Kisup Chung, Ekmini Anuja De Silva, Siva Kanakasabapathy, Indira Seshadri |
2021-09-28 |
| 11081568 |
Protective bilayer inner spacer for nanosheet devices |
Yao Yao, Ruilong Xie, Veeraraghavan S. Basker |
2021-08-03 |
| 11075281 |
Additive core subtractive liner for metal cut etch processes |
Ruqiang Bao, Kisup Chung, Sivananda K. Kanakasabapathy, David L. Rath, Indira Seshadri +1 more |
2021-07-27 |
| 11056399 |
Source and drain EPI protective spacer during single diffusion break formation |
Yao Yao, Veeraraghavan S. Basker, Kangguo Cheng, Zhenxing Bi, Ruilong Xie |
2021-07-06 |
| 11024536 |
Contact interlayer dielectric replacement with improved SAC cap retention |
Adra Carr, Vimal Kamineni, Ruilong Xie, Nigel G. Cave, Veeraraghavan S. Basker |
2021-06-01 |
| 11024715 |
FinFET gate cut after dummy gate removal |
John R. Sporre, Siva Kanakasabapathy, Jeffrey C. Shearer, Nicole Saulnier |
2021-06-01 |
| 11011417 |
Method and structure of metal cut |
Su Chen Fan, Ruilong Xie, Veeraraghavan S. Basker |
2021-05-18 |
| 11004944 |
Gate cut device fabrication with extended height gates |
Kangguo Cheng, John R. Sporre, Peng Xu |
2021-05-11 |
| 10998314 |
Gate cut with integrated etch stop layer |
Marc A. Bergendahl, Rajasekhar Venigalla |
2021-05-04 |
| 10985260 |
Trench silicide contacts with high selectivity process |
Balasubramanian Pranatharthiharan, Ruilong Xie |
2021-04-20 |
| 10985250 |
Gate cut device fabrication with extended height gates |
Kangguo Cheng, John R. Sporre, Peng Xu |
2021-04-20 |
| 10985076 |
Single metallization scheme for gate, source, and drain contact integration |
Victor Chan, Gangadhara Raja Muthinti |
2021-04-20 |
| 10957544 |
Gate cut with high selectivity to preserve interlevel dielectric layer |
Ryan O. Jung, Ruilong Xie |
2021-03-23 |
| 10943990 |
Gate contact over active enabled by alternative spacer scheme and claw-shaped cap |
Victor Chan, Gangadhara Raja Muthinti, Veeraraghavan S. Basker, Junli Wang, Kisik Choi +1 more |
2021-03-09 |
| 10923401 |
Gate cut critical dimension shrink and active gate defect healing using selective deposition |
Marc A. Bergendahl, Ekmini Anuja De Silva, Alex Joseph Varghese, Yann Mignot, Matthew T. Shoudy +2 more |
2021-02-16 |
| 10903111 |
Semiconductor device with linerless contacts |
Alex Joseph Varghese, Marc A. Bergendahl, Dallas Lea, Matthew T. Shoudy, Yann Mignot +2 more |
2021-01-26 |
| 10892181 |
Semiconductor device with mitigated local layout effects |
Huimei Zhou, Gen Tsutsui, Veeraraghavan S. Basker, Dechao Guo, Huiming Bu +1 more |
2021-01-12 |
