| 11195792 |
Top via stack |
Brent A. Anderson, Lawrence A. Clevenger, Christopher J. Penny, Nicholas Anthony Lanzillo, Robert R. Robison |
2021-12-07 |
| 11195753 |
Tiered-profile contact for semiconductor |
Kangguo Cheng |
2021-12-07 |
| 11195795 |
Well-controlled edge-to-edge spacing between adjacent interconnects |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2021-12-07 |
| 11189568 |
Top via interconnect having a line with a reduced bottom dimension |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2021-11-30 |
| 11177166 |
Etch stop layer removal for capacitance reduction in damascene top via integration |
Christopher J. Penny, Brent A. Anderson, Lawrence A. Clevenger, Robert R. Robison, Nicholas Anthony Lanzillo |
2021-11-16 |
| 11171084 |
Top via with next level line selective growth |
Brent A. Anderson, Lawrence A. Clevenger, Christopher J. Penny, Nicholas Anthony Lanzillo, Robert R. Robison |
2021-11-09 |
| 11164815 |
Bottom barrier free interconnects without voids |
Kenneth Chun Kuen Cheng, Koichi Motoyama, Cornelius Brown Peethala, Hosadurga Shobha, Joe Lee |
2021-11-02 |
| 11164777 |
Top via with damascene line and via |
Lawrence A. Clevenger, Brent A. Anderson, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2021-11-02 |
| 11158537 |
Top vias with subtractive line formation |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Christopher J. Penny, Robert R. Robison |
2021-10-26 |
| 11081388 |
Forming barrierless contact |
Koichi Motoyama, Ashim Dutta, Iqbal Rashid Saraf, Benjamin D. Briggs |
2021-08-03 |
| 10943990 |
Gate contact over active enabled by alternative spacer scheme and claw-shaped cap |
Andrew M. Greene, Victor Chan, Gangadhara Raja Muthinti, Veeraraghavan S. Basker, Junli Wang +1 more |
2021-03-09 |
| 10892195 |
Method and structure for forming a vertical field-effect transistor using a replacement metal gate process |
Choonghyun Lee, Kangguo Cheng |
2021-01-12 |
| 10886183 |
Method and structure for forming a vertical field-effect transistor using a replacement metal gate process |
Choonghyun Lee, Kangguo Cheng |
2021-01-05 |
