| 11205723 |
Selective source/drain recess for improved performance, isolation, and scaling |
Ardasheir Rahman, Brent A. Anderson, Stuart A. Sieg, Christopher J. Waskiewicz |
2021-12-21 |
$5,237,000 |
| 11195745 |
Forming single and double diffusion breaks for fin field-effect transistor structures |
Juntao Li, Kangguo Cheng, Ruilong Xie |
2021-12-07 |
$3,115,000 |
| 11189725 |
VTFET with cell height constraints |
Heng Wu, Ruilong Xie, Lan Yu, Alexander Reznicek |
2021-11-30 |
$2,996,000 |
| 11189693 |
Transistor having reduced contact resistance |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2021-11-30 |
$2,996,000 |
| 11183558 |
Nanosheet transistor having partially self-limiting bottom isolation extending into the substrate and under the source/drain and gate regions |
Chun-Chen Yeh, Veeraraghavan S. Basker, Alexander Reznicek |
2021-11-23 |
$2,653,000 |
| 11177162 |
Trapezoidal interconnect at tight BEOL pitch |
Nicholas Anthony Lanzillo, Hosadurga Shobha, Huai Huang, Koichi Motoyama, Christopher J. Penny +1 more |
2021-11-16 |
$1,912,000 |
| 11177132 |
Self aligned block masks for implantation control |
Romain Lallement, Ardasheir Rahman, Liying Jiang, Brent A. Anderson |
2021-11-16 |
$1,912,000 |
| 11164792 |
Complementary field-effect transistors |
Ruilong Xie, Alexander Reznicek, Jingyun Zhang |
2021-11-02 |
$2,126,000 |
| 11164778 |
Barrier-free vertical interconnect structure |
Hsueh-Chung Chen, Su Chen Fan, Yann Mignot, Lawrence A. Clevenger |
2021-11-02 |
$2,126,000 |
| 11152307 |
Buried local interconnect |
Kangguo Cheng, Lawrence A. Clevenger, Carl Radens, John H. Zhang |
2021-10-19 |
$2,168,000 |
| 11152257 |
Barrier-less prefilled via formation |
Nicholas Anthony Lanzillo, Hosadurga Shobha, Lawrence A. Clevenger, Christopher J. Penny, Robert R. Robison +1 more |
2021-10-19 |
$2,168,000 |
| 11145550 |
Dummy fin template to form a self-aligned metal contact for output of vertical transport field effect transistor |
Brent A. Anderson, Albert M. Young |
2021-10-12 |
$3,967,000 |
| 11145551 |
FinFET devices |
Veeraraghavan S. Basker, Kangguo Cheng, Theodoras E. Standaert |
2021-10-12 |
$17,140,000 |
| 11145543 |
Semiconductor via structure with lower electrical resistance |
Lawrence A. Clevenger, Baozhen Li, Kirk D. Peterson, Terry A. Spooner |
2021-10-12 |
$3,967,000 |
| 11139385 |
Interface-less contacts to source/drain regions and gate electrode over active portion of device |
Veeraraghavan S. Basker, Huiming Bu |
2021-10-05 |
$5,888,000 |
| 11121032 |
Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2021-09-14 |
$2,674,000 |
| 11107814 |
Vertical fin field effect transistor devices with a replacement metal gate |
Ruqiang Bao, Michael P. Belyansky |
2021-08-31 |
$6,618,000 |
| 11101217 |
Buried power rail for transistor devices |
Ruilong Xie, Alexander Reznicek, Kangguo Cheng |
2021-08-24 |
$4,861,000 |
| 11088278 |
Precise junction placement in vertical semiconductor devices using etch stop layers |
Huiming Bu, Liying Jiang, Siyuranga O. Koswatta |
2021-08-10 |
$4,960,000 |
| 11075161 |
Large via buffer |
Yann Mignot, Hsueh-Chung Chen, Chi-Chun Liu, Mary Claire Silvestre |
2021-07-27 |
$4,187,000 |
| 11062993 |
Contacts having a geometry to reduce resistance |
Lawrence A. Clevenger, Baozhen Li, Kirk D. Peterson, Terry A. Spooner |
2021-07-13 |
$4,436,000 |
| 11062960 |
Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devices |
Heng Wu, Kangguo Cheng, Zuoguang Liu |
2021-07-13 |
$4,436,000 |
| 11056386 |
Two-dimensional (2D) self-aligned contact (or via) to enable further device scaling |
Veeraraghavan S. Basker, Chun-Chen Yeh, Alexander Reznicek |
2021-07-06 |
$5,313,000 |
| 11049858 |
Vertical fin field effect transistor devices with a replacement metal gate |
Ruqiang Bao, Michael P. Belyansky |
2021-06-29 |
$5,149,000 |
| 11024369 |
Static random-access memory cell design |
Lan Yu, Heng Wu, Ruqiang Bao, Dechao Guo |
2021-06-01 |
$4,052,000 |
