Issued Patents 2021
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11192101 | Method to create multilayer microfluidic chips using spin-on carbon as gap filling materials | Yann Mignot, Joshua T. Smith, Bassem M. Hamieh, Nelson Felix, Robert L. Bruce | 2021-12-07 |
| 11195995 | Back-end-of-line compatible processing for forming an array of pillars | Yann Mignot, Ekmini Anuja De Silva, Nelson Felix, John C. Arnold | 2021-12-07 |
| 11171002 | Alternating hardmasks for tight-pitch line formation | John C. Arnold, Anuja E. DeSilva, Nelson Felix, Yann Mignot, Stuart A. Sieg | 2021-11-09 |
| 11139242 | Via-to-metal tip connections in multi-layer chips | Ruilong Xie, Chih-Chao Yang, Kangguo Cheng | 2021-10-05 |
| 11133260 | Self-aligned top via | John C. Arnold, Dominik Metzler, Nelson Felix, Ashim Dutta | 2021-09-28 |
| 11120458 | Group-based sequential recommendations | Tian Tian, Hong Min, Gong Su, Jie Xu | 2021-09-14 |
| 11084032 | Method to create multilayer microfluidic chips using spin-on carbon as gap fill and spin-on glass tone inversion | Yann Mignot, Joshua T. Smith, Bassem M. Hamieh, Nelson Felix, Robert L. Bruce | 2021-08-10 |
| 11075161 | Large via buffer | Yann Mignot, Hsueh-Chung Chen, Junli Wang, Mary Claire Silvestre | 2021-07-27 |
| 11031248 | Alternating hardmasks for tight-pitch line formation | Sean D. Burns, Nelson Felix, Yann Mignot, Stuart A. Sieg | 2021-06-08 |
| 11004737 | Field effect device with reduced capacitance and resistance in source/drain contacts at reduced gate pitch | Kangguo Cheng, Peng Xu | 2021-05-11 |
| 10978576 | Techniques for vertical FET gate length control | Chun Wing Yeung, Robin Hsin Kuo Chao, Zhenxing Bi, Kristin Schmidt, Yann Mignot | 2021-04-13 |
| 10978550 | Efficient metal-insulator-metal capacitor | Kisup Chung, Isabel C. Estrada-Raygoza, Hemanth Jagannathan, Yann Mignot, Hao Tang | 2021-04-13 |
| 10964648 | Chip security fingerprint | Kangguo Cheng, Shawn P. Fetterolf | 2021-03-30 |
| 10949601 | Reducing chemoepitaxy directed self-assembled defects | Michael A. Guillorn, Kafai Lai, Ananthan Raghunathan, HsinYu Tsai | 2021-03-16 |
| 10916630 | Nanosheet devices with improved electrostatic integrity | Ruilong Xie, Cheng Chi, Kangguo Cheng | 2021-02-09 |
| 10892328 | Source/drain extension regions and air spacers for nanosheet field-effect transistor structures | Yi Song, Zhenxing Bi, Kangguo Cheng | 2021-01-12 |