| 11211379 |
Fabrication of field effect transistors with different threshold voltages through modified channel interfaces |
Takashi Ando, Ruqiang Bao, Choonghyun Lee |
2021-12-28 |
| 11205587 |
Liner and cap structures for reducing local interconnect vertical resistance without compromising reliability |
Su Chen Fan, Raghuveer R. Patlolla, Cornelius Brown Peethala |
2021-12-21 |
| 11195762 |
Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device |
Ruqiang Bao, Vijay Narayanan, Terence B. Hook |
2021-12-07 |
| 11177257 |
Fabrication of field effect transistors with different threshold voltages through modified channel interfaces |
Takashi Ando, Ruqiang Bao, Choonghyun Lee |
2021-11-16 |
| 11152265 |
Local isolation of source/drain for reducing parasitic capacitance in vertical field effect transistors |
Ruilong Xie, Christopher J. Waskiewicz, Alexander Reznicek |
2021-10-19 |
| 11145555 |
Gate-last process for vertical transport field-effect transistor |
Shogo Mochizuki, Choonghyun Lee |
2021-10-12 |
| 11121209 |
Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor |
Takashi Ando, Eduard A. Cartier, Paul C. Jamison, Vijay Narayanan |
2021-09-14 |
| 11094801 |
Oxide isolated fin-type field-effect transistors |
Ruqiang Bao, Paul C. Jamison, Choonghyun Lee |
2021-08-17 |
| 11088033 |
Low resistance source-drain contacts using high temperature silicides |
Praneet Adusumilli, Christian Lavoie, Ahmet S. Ozcan |
2021-08-10 |
| 11062956 |
Low resistance source-drain contacts using high temperature silicides |
Praneet Adusumilli, Christian Lavoie, Ahmet S. Ozcan |
2021-07-13 |
| 10978550 |
Efficient metal-insulator-metal capacitor |
Kisup Chung, Isabel C. Estrada-Raygoza, Chi-Chun Liu, Yann Mignot, Hao Tang |
2021-04-13 |
| 10978551 |
Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor |
Takashi Ando, Eduard A. Cartier, Paul C. Jamison, Vijay Narayanan |
2021-04-13 |
| 10971626 |
Interface charge reduction for SiGe surface |
Devendra K. Sadana, Dechao Guo, Joel P. de Souza, Ruqiang Bao, Stephen W. Bedell +3 more |
2021-04-06 |
| 10937890 |
Vertical field-effect transistor late gate recess process with improved inter-layer dielectric protection |
Wenyu Xu, Ruilong Xie, Pietro Montanini |
2021-03-02 |
| 10930567 |
Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact |
Choonghyun Lee, Shogo Mochizuki, Chun Wing Yeung |
2021-02-23 |
| 10930566 |
Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments |
Lisa F. Edge, Paul C. Jamison, Vamsi K. Paruchuri |
2021-02-23 |
| 10916432 |
Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device |
Takashi Ando, Pouya Hashemi, Choonghyun Lee, Vijay Narayanan |
2021-02-09 |
| 10892336 |
Wrap-around-contact structure for top source/drain in vertical FETS |
Choonghyun Lee, Christopher J. Waskiewicz, Alexander Reznicek |
2021-01-12 |
| 10892339 |
Gate first technique in vertical transport FET using doped silicon gates with silicide |
Ruqiang Bao, Paul C. Jamison, Choonghyun Lee, Sanjay C. Mehta, Vijay Narayanan |
2021-01-12 |
| 10886362 |
Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement |
Takashi Ando, Eduard A. Cartier, Paul C. Jamison |
2021-01-05 |
