Issued Patents 2021
Showing 25 most recent of 131 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11211452 | Transistor having stacked source/drain regions with formation assistance regions and multi-region wrap-around source/drain contacts | Reinaldo Vega, Kangguo Cheng, Chanro Park, Juntao Li | 2021-12-28 |
| 11211462 | Using selectively formed cap layers to form self-aligned contacts to source/drain regions | Chanro Park, Choonghyun Lee, Kangguo Cheng | 2021-12-28 |
| 11211291 | Via formation with robust hardmask removal | Christopher J. Waskiewicz, Kangguo Cheng, Chih-Chao Yang | 2021-12-28 |
| 11205590 | Self-aligned contacts for MOL | Su Chen Fan, Adra Carr, Kangguo Cheng | 2021-12-21 |
| 11205592 | Self-aligned top via structure | Cheng Chi, Chih-Chao Yang, Kangguo Cheng | 2021-12-21 |
| 11205698 | Multiple work function nanosheet transistors with inner spacer modulation | Takashi Ando, Alexander Reznicek, Pouya Hashemi | 2021-12-21 |
| 11201153 | Stacked field effect transistor with wrap-around contacts | Chun-Chen Yeh, Alexander Reznicek, Dechao Guo | 2021-12-14 |
| 11201152 | Method, apparatus, and system for fin-over-nanosheet complementary field-effect-transistor | Steven R. Soss, Steven Bentley, Daniel Chanemougame, Julien Frougier, Bipul C. Paul +1 more | 2021-12-14 |
| 11195746 | Nanosheet transistor with self-aligned dielectric pillar | Kangguo Cheng, Julien Frougier | 2021-12-07 |
| 11195745 | Forming single and double diffusion breaks for fin field-effect transistor structures | Juntao Li, Kangguo Cheng, Junli Wang | 2021-12-07 |
| 11195911 | Bottom dielectric isolation structure for nanosheet containing devices | Xin Miao, Takashi Ando, Jingyun Zhang | 2021-12-07 |
| 11189725 | VTFET with cell height constraints | Heng Wu, Lan Yu, Alexander Reznicek, Junli Wang | 2021-11-30 |
| 11189712 | Formation of vertical transport field-effect transistor structure having increased effective width | Alexander Reznicek, Takashi Ando, Pouya Hashemi | 2021-11-30 |
| 11189713 | Nanosheet transistor having wrap-around bottom isolation | Lan Yu, Heng Wu, Kangguo Cheng | 2021-11-30 |
| 11183389 | Fin field effect transistor devices with self-aligned gates | Wenyu Xu, Stuart A. Sieg, John R. Sporre | 2021-11-23 |
| 11183632 | Self-aligned edge passivation for robust resistive random access memory connection | Takashi Ando, Pouya Hashemi, Alexander Reznicek | 2021-11-23 |
| 11183561 | Nanosheet transistor with inner spacers | Kangguo Cheng, Chanro Park, Juntao Li | 2021-11-23 |
| 11183581 | Vertical field effect transistor having improved uniformity | Kangguo Cheng, Juntao Li, Chanro Park | 2021-11-23 |
| 11177632 | Augmented semiconductor lasers with spontaneous emissions blockage | Julien Frougier, Kangguo Cheng, Chanro Park | 2021-11-16 |
| 11177181 | Scalable device for FINFET technology | Kangguo Cheng, Juntao Li, Chanro Park | 2021-11-16 |
| 11177370 | Vertical field effect transistor with self-aligned source and drain top junction | Chun-Chen Yeh, Alexander Reznicek, Chen Zhang | 2021-11-16 |
| 11177366 | Gate induced drain leakage reduction in FinFETs | Alexander Reznicek, Takashi Ando, Jingyun Zhang | 2021-11-16 |
| 11177258 | Stacked nanosheet CFET with gate all around structure | Alexander Reznicek, Heng Wu, Lan Yu | 2021-11-16 |
| 11177367 | Self-aligned bottom spacer EPI last flow for VTFET | Tao Li, Sung-Dae Suk, Heng Wu | 2021-11-16 |
| 11171044 | Planarization controllability for interconnect structures | Chanro Park, Kangguo Cheng, Julien Frougier, Chih-Chao Yang | 2021-11-09 |