Issued Patents 2021
Showing 1–25 of 58 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11205728 | Vertical field effect transistor with reduced parasitic capacitance | Choonghyun Lee, Alexander Reznicek, Jingyun Zhang | 2021-12-21 |
| 11201241 | Vertical field effect transistor and method of manufacturing a vertical field effect transistor | Choonghyun Lee, Alexander Reznicek, Richard Southwick | 2021-12-14 |
| 11195911 | Bottom dielectric isolation structure for nanosheet containing devices | Ruilong Xie, Takashi Ando, Jingyun Zhang | 2021-12-07 |
| 11196001 | 3D ReRAM formed by metal-assisted chemical etching with replacement wordline and wordline separation | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-12-07 |
| 11177369 | Stacked vertical field effect transistor with self-aligned junctions | Lan Yu, Chen Zhang, Heng Wu, Kangguo Cheng | 2021-11-16 |
| 11171204 | High thermal budget compatible punch through stop integration using doped glass | Kangguo Cheng, Sanjay C. Mehta, Chun-Chen Yeh | 2021-11-09 |
| 11164940 | Method of forming III-V on insulator structure on semiconductor substrate | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-11-02 |
| 11152460 | High thermal budget compatible punch through stop integration using doped glass | Kangguo Cheng, Sanjay C. Mehta, Chun-Chen Yeh | 2021-10-19 |
| 11121215 | iFinFET | Juntao Li, Kangguo Cheng, Chen Zhang | 2021-09-14 |
| 11107905 | Vertical field effect transistors with self aligned source/drain junctions | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2021-08-31 |
| 11101181 | Junction formation in thick-oxide and thin-oxide vertical FETs on the same chip | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-08-24 |
| 11094798 | Vertical FET with symmetric junctions | Lan Yu, Chen Zhang, Heng Wu, Kangguo Cheng | 2021-08-17 |
| 11094823 | Stress induction in 3D device channel using elastic relaxation of high stress material | Kangguo Cheng, Nicolas Loubet, Alexander Reznicek | 2021-08-17 |
| 11088026 | Wimpy device by selective laser annealing | Kangguo Cheng, Nicolas Loubet, Alexander Reznicek | 2021-08-10 |
| 11088288 | Stacked-nanosheet semiconductor structures with support structures | Ruilong Xie, Jingyun Zhang, Alexander Reznicek | 2021-08-10 |
| 11081482 | Fabrication of vertical fin field effect transistors having top air spacers and a self aligned top junction | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-08-03 |
| 11081400 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-08-03 |
| 11075273 | Nanosheet electrostatic discharge structure | Alexander Reznicek, Choonghyun Lee, Jingyun Zhang | 2021-07-27 |
| 11069775 | Sacrificial layer for channel surface retention and inner spacer formation in stacked-channel FETS | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer | 2021-07-20 |
| 11069800 | Single electron transistor with gap tunnel barriers | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-07-20 |
| 11062965 | Flipped vertical field-effect-transistor | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-07-13 |
| 11063134 | Vertical transistors with top spacers | Jingyun Zhang, Choonghyun Lee, Alexander Reznicek | 2021-07-13 |
| 11062959 | Inner spacer and junction formation for integrating extended-gate and standard-gate nanosheet transistors | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2021-07-13 |
| 11056537 | Self-aligned gate contact integration with metal resistor | Richard A. Conti, Ruilong Xie, Kangguo Cheng | 2021-07-06 |
| 11049935 | Non-planar field effect transistor devices with low-resistance metallic gate structures | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2021-06-29 |