Issued Patents 2021
Showing 1–25 of 100 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11211452 | Transistor having stacked source/drain regions with formation assistance regions and multi-region wrap-around source/drain contacts | Ruilong Xie, Reinaldo Vega, Kangguo Cheng, Chanro Park | 2021-12-28 |
| 11201231 | Silicon germanium alloy fins with reduced defects | Kangguo Cheng, Hong He | 2021-12-14 |
| 11195912 | Inner spacer for nanosheet transistors | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2021-12-07 |
| 11195754 | Transistor with reduced gate resistance and improved process margin of forming self-aligned contact | Kangguo Cheng, Zhenxing Bi, Dexin Kong | 2021-12-07 |
| 11195745 | Forming single and double diffusion breaks for fin field-effect transistor structures | Kangguo Cheng, Ruilong Xie, Junli Wang | 2021-12-07 |
| 11195755 | Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors | Kangguo Cheng, Zhenxing Bi, Dexin Kong | 2021-12-07 |
| 11183430 | Self-limiting liners for increasing contact trench volume in n-type and p-type transistors | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2021-11-23 |
| 11183581 | Vertical field effect transistor having improved uniformity | Kangguo Cheng, Ruilong Xie, Chanro Park | 2021-11-23 |
| 11183636 | Techniques for forming RRAM cells | Kangguo Cheng, Dexin Kong, Takashi Ando | 2021-11-23 |
| 11183561 | Nanosheet transistor with inner spacers | Kangguo Cheng, Ruilong Xie, Chanro Park | 2021-11-23 |
| 11177181 | Scalable device for FINFET technology | Ruilong Xie, Kangguo Cheng, Chanro Park | 2021-11-16 |
| 11164959 | VFET devices with ILD protection | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2021-11-02 |
| 11158730 | Formation of inner spacer on nanosheet MOSFET | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2021-10-26 |
| 11158544 | Vertical stacked nanosheet CMOS transistors with different work function metals | Kangguo Cheng, Ruilong Xie, Chanro Park | 2021-10-26 |
| 11145508 | Forming a fin cut in a hardmask | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2021-10-12 |
| 11139307 | Vertical field effect transistor including integrated antifuse | Kangguo Cheng, Geng Wang, Qintao Zhang | 2021-10-05 |
| 11139399 | Vertical transistor with self-aligned gate | Kangguo Cheng, Ruilong Xie, Chanro Park | 2021-10-05 |
| 11131647 | Ion-sensitive field-effect transistor with sawtooth well to enhance sensitivity | Chanro Park, Kangguo Cheng, Ruilong Xie | 2021-09-28 |
| 11121318 | Tunable forming voltage for RRAM device | Dexin Kong, Kangguo Cheng, Zheng Xu | 2021-09-14 |
| 11120991 | Lateral semiconductor nanotube with hexagonal shape | Kangguo Cheng, Peng Xu, Choonghyun Lee | 2021-09-14 |
| 11121215 | iFinFET | Kangguo Cheng, Chen Zhang, Xin Miao | 2021-09-14 |
| 11121044 | Vertically stacked nanosheet CMOS transistor | Kangguo Cheng, Zhenxing Bi | 2021-09-14 |
| 11121232 | Stacked nanosheets with self-aligned inner spacers and metallic source/drain | Choonghyun Lee, Kangguo Cheng | 2021-09-14 |
| 11107731 | Self-aligned repaired top via | Ruilong Xie, Chih-Chao Yang, Carl Radens, Kangguo Cheng | 2021-08-31 |
| 11101323 | RRAM cells in crossbar array architecture | Dexin Kong, Takashi Ando, Kangguo Cheng | 2021-08-24 |