| 11211452 |
Transistor having stacked source/drain regions with formation assistance regions and multi-region wrap-around source/drain contacts |
Ruilong Xie, Reinaldo Vega, Kangguo Cheng, Juntao Li |
2021-12-28 |
$7,175,000 |
| 11211462 |
Using selectively formed cap layers to form self-aligned contacts to source/drain regions |
Choonghyun Lee, Kangguo Cheng, Ruilong Xie |
2021-12-28 |
$7,175,000 |
| 11205591 |
Top via interconnect with self-aligned barrier layer |
Kenneth Chun Kuen Cheng, Koichi Motoyama, Chih-Chao Yang |
2021-12-21 |
$5,237,000 |
| 11201056 |
Pitch multiplication with high pattern fidelity |
Koichi Motoyama, Kenneth Chun Kuen Cheng, Chih-Chao Yang |
2021-12-14 |
$4,192,000 |
| 11201112 |
Fully-aligned skip-vias |
Kenneth Chun Kuen Cheng, Koichi Motoyama, Chih-Chao Yang |
2021-12-14 |
$4,192,000 |
| 11183561 |
Nanosheet transistor with inner spacers |
Kangguo Cheng, Ruilong Xie, Juntao Li |
2021-11-23 |
$2,653,000 |
| 11183581 |
Vertical field effect transistor having improved uniformity |
Kangguo Cheng, Juntao Li, Ruilong Xie |
2021-11-23 |
$2,653,000 |
| 11177163 |
Top via structure with enlarged contact area with upper metallization level |
Koichi Motoyama, Kenneth Chun Kuen Cheng, Chih-Chao Yang |
2021-11-16 |
$1,912,000 |
| 11177170 |
Removal of barrier and liner layers from a bottom of a via |
Koichi Motoyama, Kenneth Chun Kuen Cheng, Nicholas Anthony Lanzillo |
2021-11-16 |
$1,912,000 |
| 11177181 |
Scalable device for FINFET technology |
Ruilong Xie, Kangguo Cheng, Juntao Li |
2021-11-16 |
$1,912,000 |
| 11177214 |
Interconnects with hybrid metal conductors |
Kenneth Chun Kuen Cheng, Koichi Motoyama, Chih-Chao Yang |
2021-11-16 |
$1,912,000 |
| 11177632 |
Augmented semiconductor lasers with spontaneous emissions blockage |
Julien Frougier, Kangguo Cheng, Ruilong Xie |
2021-11-16 |
$1,912,000 |
| 11171044 |
Planarization controllability for interconnect structures |
Ruilong Xie, Kangguo Cheng, Julien Frougier, Chih-Chao Yang |
2021-11-09 |
$5,376,000 |
| 11164774 |
Interconnects with spacer structure for forming air-gaps |
Kenneth Chun Kuen Cheng, Koichi Motoyama, Chih-Chao Yang |
2021-11-02 |
$2,126,000 |
| 11164793 |
Reduced source/drain coupling for CFET |
Ruilong Xie, Alexander Reznicek, Chun-Chen Yeh |
2021-11-02 |
$2,126,000 |
| 11158544 |
Vertical stacked nanosheet CMOS transistors with different work function metals |
Kangguo Cheng, Juntao Li, Ruilong Xie |
2021-10-26 |
$2,874,000 |
| 11139202 |
Fully aligned top vias with replacement metal lines |
Koichi Motoyama, Kenneth Chun Kuen Cheng, Chih-Chao Yang |
2021-10-05 |
$5,888,000 |
| 11139399 |
Vertical transistor with self-aligned gate |
Juntao Li, Kangguo Cheng, Ruilong Xie |
2021-10-05 |
$5,888,000 |
| 11133308 |
Uniform work function metal recess for vertical transistor complementary metal oxide semiconductor technology |
Ruilong Xie, Muthumanickam Sankarapandian, Kangguo Cheng |
2021-09-28 |
$6,479,000 |
| 11131647 |
Ion-sensitive field-effect transistor with sawtooth well to enhance sensitivity |
Kangguo Cheng, Juntao Li, Ruilong Xie |
2021-09-28 |
$6,479,000 |
| 11127676 |
Removal or reduction of chamfer for fully-aligned via |
Koichi Motoyama, Kenneth Chun Kuen Cheng, Chih-Chao Yang |
2021-09-21 |
$21,372,000 |
| 11127825 |
Middle-of-line contacts with varying contact area providing reduced contact resistance |
Kangguo Cheng, Ruilong Xie, Hari Prasad Amanapu |
2021-09-21 |
$21,372,000 |
| 11094590 |
Structurally stable self-aligned subtractive vias |
Sagarika Mukesh, Dominik Metzler, Timothy Mathew Philip |
2021-08-17 |
$3,119,000 |
| 11094883 |
Structure and method to fabricate resistive memory with vertical pre-determined filament |
Kangguo Cheng, Ruilong Xie, Choonghyun Lee |
2021-08-17 |
$3,119,000 |
| 11094580 |
Structure and method to fabricate fully aligned via with reduced contact resistance |
Kenneth Chun Kuen Cheng, Koichi Motoyama, Chih-Chao Yang |
2021-08-17 |
$3,119,000 |
