Issued Patents 2021
Showing 26–50 of 54 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11094784 | Gate-all-around field effect transistor having stacked U shaped channels configured to improve the effective width of the transistor | Kangguo Cheng, Ruilong Xie, Julien Frougier, Tenko Yamashita | 2021-08-17 |
| 11094883 | Structure and method to fabricate resistive memory with vertical pre-determined filament | Kangguo Cheng, Ruilong Xie, Choonghyun Lee | 2021-08-17 |
| 11069677 | Semiconductor device comprising metal-insulator-metal (MIM) capacitor | Ruilong Xie, Kangguo Cheng, Juntao Li | 2021-07-20 |
| 11069680 | FinFET-based integrated circuits with reduced parasitic capacitance | Ruilong Xie, Juntao Li, Kangguo Cheng | 2021-07-20 |
| 11043411 | Integration of air spacer with self-aligned contact in transistor | Ruilong Xie, Julien Frougier, Kangguo Cheng | 2021-06-22 |
| 11031485 | Transistor with airgap spacer | Kangguo Cheng, Juntao Li, Ruilong Xie | 2021-06-08 |
| 11031295 | Gate cap last for self-aligned contact | Kangguo Cheng, Ruilong Xie, Choonghyun Lee | 2021-06-08 |
| 11024577 | Embedded anti-fuses for small scale applications | Kenneth Chun Kuen Cheng, Koichi Motoyama, Chih-Chao Yang | 2021-06-01 |
| 11024720 | Non-self aligned contact semiconductor devices | Ruilong Xie, Hari Prasad Amanapu, Kangguo Cheng | 2021-06-01 |
| 11011638 | Transistor having airgap spacer around gate structure | Ruilong Xie, Julien Frougier, Kangguo Cheng | 2021-05-18 |
| 11011626 | Fin field-effect transistor with reduced parasitic capacitance and reduced variability | Kangguo Cheng, Ruilong Xie, Juntao Li | 2021-05-18 |
| 11004750 | Middle of the line contact formation | Ruilong Xie, Balasubramanian Pranatharthiharan, Nicolas Loubet | 2021-05-11 |
| 10998424 | Vertical metal-air transistor | Juntao Li, Kangguo Cheng, Ruilong Xie | 2021-05-04 |
| 10978343 | Interconnect structure having fully aligned vias | Nicholas Anthony Lanzillo, Christopher J. Penny, Lawrence A. Clevenger, Balasubramanian Pranatharthiharan | 2021-04-13 |
| 10978574 | Floating gate prevention and capacitance reduction in semiconductor devices | Ruilong Xie, Kangguo Cheng, Juntao Li | 2021-04-13 |
| 10971362 | Extreme ultraviolet patterning process with resist hardening | Ruilong Xie, Kangguo Cheng, Choonghyun Lee | 2021-04-06 |
| 10957799 | Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions | Ruilong Xie, Julien Frougier, Edward J. Nowak, Yi Qi, Kangguo Cheng +1 more | 2021-03-23 |
| 10950459 | Back end of line structures with metal lines with alternating patterning and metallization schemes | Ruilong Xie, Chih-Chao Yang, Kangguo Cheng, Juntao Li | 2021-03-16 |
| 10935516 | Ion-sensitive field-effect transistor formed with alternating dielectric stack to enhance sensitivity | Kangguo Cheng, Juntao Li, Ruilong Xie | 2021-03-02 |
| 10930510 | Semiconductor device with improved contact resistance and via connectivity | Kangguo Cheng, Ruilong Xie, Juntao Li | 2021-02-23 |
| 10930568 | Method and structure to improve overlay margin of non-self-aligned contact in metallization layer | Ruilong Xie, Kangguo Cheng, Juntao Li | 2021-02-23 |
| 10923389 | Air-gap spacers for field-effect transistors | Min Gyu Sung, Hoon Kim, Ruilong Xie | 2021-02-16 |
| 10923590 | Wrap-around contact for vertical field effect transistors | Kangguo Cheng, Julien Frougier, Ruilong Xie | 2021-02-16 |
| 10916650 | Uniform bottom spacer for VFET devices | Steven R. Bentley, Cheng Chi, Ruilong Xie, Tenko Yamashita | 2021-02-09 |
| 10903369 | Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions | Ruilong Xie, Julien Frougier, Edward J. Nowak, Yi Qi, Kangguo Cheng +1 more | 2021-01-26 |