Issued Patents 2021
Showing 25 most recent of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11183593 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Peng Xu | 2021-11-23 |
| 11164958 | Nanosheet transistor having a strained channel with strain-preserving multi-segmented source/drain regions | Shogo Mochizuki, Zhenxing Bi, Richard A. Conti | 2021-11-02 |
| 11164782 | Self-aligned gate contact compatible cross couple contact formation | Ruilong Xie, Balasubramanian S. Pranatharthi Haran, Dechao Guo, Alexander Reznicek | 2021-11-02 |
| 11121233 | Forming nanosheet transistor using sacrificial spacer and inner spacers | Kangguo Cheng, Julien Frougier | 2021-09-14 |
| 11094823 | Stress induction in 3D device channel using elastic relaxation of high stress material | Kangguo Cheng, Xin Miao, Alexander Reznicek | 2021-08-17 |
| 11088026 | Wimpy device by selective laser annealing | Kangguo Cheng, Xin Miao, Alexander Reznicek | 2021-08-10 |
| 11088247 | Method of fabrication of a semiconductor device including one or more nanostructures | Shay Reboh, Kangguo Cheng, Remi Coquand | 2021-08-10 |
| 11081547 | Method for making superimposed transistors | Shay Reboh, Remi Coquand, Tenko Yamashita, Jingyun Zhang | 2021-08-03 |
| 11069744 | Steep-switch vertical field effect transistor | Daniel Chanemougame, Julien Frougier, Ruilong Xie | 2021-07-20 |
| 11069682 | Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods | Qing Liu, Prasanna Khare | 2021-07-20 |
| 11049933 | Creation of stress in the channel of a nanosheet transistor | Tenko Yamashita, Guillaume Audoit, Nicolas Bernier, Remi Coquand, Shay Reboh | 2021-06-29 |
| 11038042 | Forming gate last vertical FET with self-aligned spacers and junctions | — | 2021-06-15 |
| 11004750 | Middle of the line contact formation | Ruilong Xie, Chanro Park, Balasubramanian Pranatharthiharan | 2021-05-11 |
| 10998234 | Nanosheet bottom isolation and source or drain epitaxial growth | Ruilong Xie, Veeraraghavan S. Basker, Balasubramanian Pranatharthiharan | 2021-05-04 |
| 10998441 | Strained silicon complementary metal oxide semiconductor including a silicon containing tensile n-type fin field effect transistor and silicon containing compressive p-type fin field effect transistor formed using a dual relaxed substrate | Kangguo Cheng, Xin Miao, Alexander Reznicek | 2021-05-04 |
| 10991808 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2021-04-27 |
| 10971490 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Peng Xu | 2021-04-06 |
| 10964750 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2021-03-30 |
| 10957799 | Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions | Ruilong Xie, Julien Frougier, Chanro Park, Edward J. Nowak, Yi Qi +1 more | 2021-03-23 |
| 10930756 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Kangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang | 2021-02-23 |
| 10916627 | Nanosheet transistor with fully isolated source and drain regions and spacer pinch off | Pietro Montanini | 2021-02-09 |
| 10910273 | Forming shallow trench isolation regions for nanosheet field-effect transistor devices using sacrificial epitaxial layer | Richard A. Conti, Choonghyun Lee | 2021-02-02 |
| 10903315 | Formation of dielectric layer as etch-stop for source and drain epitaxy disconnection | Robin Hsin Kuo Chao, Julien Frougier, Ruilong Xie | 2021-01-26 |
| 10903369 | Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions | Ruilong Xie, Julien Frougier, Chanro Park, Edward J. Nowak, Yi Qi +1 more | 2021-01-26 |
| 10903331 | Positioning air-gap spacers in a transistor for improved control of parasitic capacitance | Kangguo Cheng, Wenyu Xu, Julien Frougier | 2021-01-26 |