Issued Patents 2021
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11201152 | Method, apparatus, and system for fin-over-nanosheet complementary field-effect-transistor | Ruilong Xie, Steven R. Soss, Steven Bentley, Julien Frougier, Bipul C. Paul +1 more | 2021-12-14 |
| 11177250 | Method for fabrication of high density logic and memory for advanced circuit architecture | Mark I. Gardner, H. Jim Fulford, Jeffrey Smith, Lars Liebmann | 2021-11-16 |
| 11114346 | High density logic formation using multi-dimensional laser annealing | H. Jim Fulford, Mark I. Gardner, Jeffrey Smith, Lars Liebmann | 2021-09-07 |
| 11107733 | Multi-dimensional planes of logic and memory formation using single crystal silicon orientations | Mark I. Gardner, H. Jim Fulford, Jeffrey Smith, Lars Liebmann | 2021-08-31 |
| 11101348 | Nanosheet field effect transistor with spacers between sheets | Ruilong Xie, Julien Frougier, Nigel G. Cave, Steven R. Soss, Steven Bentley +2 more | 2021-08-24 |
| 11069744 | Steep-switch vertical field effect transistor | Julien Frougier, Nicolas Loubet, Ruilong Xie | 2021-07-20 |
| 11043418 | Middle of the line self-aligned direct pattern contacts | Jason E. Stephens, Ruilong Xie, Lars Liebmann, Gregory A. Northrop | 2021-06-22 |
| 10991808 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Ali Razavieh, Kangguo Cheng | 2021-04-27 |
| 10964750 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Ali Razavieh, Kangguo Cheng | 2021-03-30 |
| 10950610 | Asymmetric gate cut isolation for SRAM | Bipul C. Paul, Ruilong Xie, Julien Frougier, Hui Zang | 2021-03-16 |