| 11201152 |
Method, apparatus, and system for fin-over-nanosheet complementary field-effect-transistor |
Ruilong Xie, Steven R. Soss, Steven Bentley, Julien Frougier, Bipul C. Paul +1 more |
2021-12-14 |
| 11177250 |
Method for fabrication of high density logic and memory for advanced circuit architecture |
Mark I. Gardner, H. Jim Fulford, Jeffrey Smith, Lars Liebmann |
2021-11-16 |
| 11114346 |
High density logic formation using multi-dimensional laser annealing |
H. Jim Fulford, Mark I. Gardner, Jeffrey Smith, Lars Liebmann |
2021-09-07 |
| 11107733 |
Multi-dimensional planes of logic and memory formation using single crystal silicon orientations |
Mark I. Gardner, H. Jim Fulford, Jeffrey Smith, Lars Liebmann |
2021-08-31 |
| 11101348 |
Nanosheet field effect transistor with spacers between sheets |
Ruilong Xie, Julien Frougier, Nigel G. Cave, Steven R. Soss, Steven Bentley +2 more |
2021-08-24 |
| 11069744 |
Steep-switch vertical field effect transistor |
Julien Frougier, Nicolas Loubet, Ruilong Xie |
2021-07-20 |
| 11043418 |
Middle of the line self-aligned direct pattern contacts |
Jason E. Stephens, Ruilong Xie, Lars Liebmann, Gregory A. Northrop |
2021-06-22 |
| 10991808 |
Steep-switch field effect transistor with integrated bi-stable resistive system |
Julien Frougier, Nicolas Loubet, Ruilong Xie, Ali Razavieh, Kangguo Cheng |
2021-04-27 |
| 10964750 |
Steep-switch field effect transistor with integrated bi-stable resistive system |
Julien Frougier, Nicolas Loubet, Ruilong Xie, Ali Razavieh, Kangguo Cheng |
2021-03-30 |
| 10950610 |
Asymmetric gate cut isolation for SRAM |
Bipul C. Paul, Ruilong Xie, Julien Frougier, Hui Zang |
2021-03-16 |
