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Middle of line gate structures |
Yanping Shen, Halting Wang, Jiehui Shu |
2021-11-09 |
| 11138514 |
Review machine learning system |
Luhui Hu, Ziang Hu |
2021-10-05 |
| 11127623 |
Single diffusion cut for gate structures |
Ruilong Xie, Jessica Dechene |
2021-09-21 |
| 11121023 |
FinFET device comprising a single diffusion break with an upper surface that is substantially coplanar with an upper surface of a fin |
Jiehui Shu, Hong Yu, Jinping Liu |
2021-09-14 |
| 11114542 |
Semiconductor device with reduced gate height budget |
Haigou Huang |
2021-09-07 |
| 11100406 |
Knowledge network platform |
Luhui Hu, Ziang Hu |
2021-08-24 |
| 11094827 |
Semiconductor devices with uniform gate height and method of forming same |
Yanping Shen, Xiaoxiao Zhang, Shesh Mani Pandey |
2021-08-17 |
| 11031389 |
Semiconductor structures over active region and methods of forming the structures |
Jiehui Shu |
2021-06-08 |
| 11011604 |
Semiconductor device with recessed source/drain contacts and a gate contact positioned above the active region |
Min-hwa Chi |
2021-05-18 |
| 11004953 |
Mask-free methods of forming structures in a semiconductor device |
Rinus Tek Po Lee, Jiehui Shu, Hong Yu, Wei Hong |
2021-05-11 |
| 10998422 |
Methods, apparatus and system for a self-aligned gate cut on a semiconductor device |
Laertis Economikos, Ruilong Xie |
2021-05-04 |
| 10978566 |
Middle of line structures |
Guowei Xu, Keith H. Tabakman, Viraj Sardesai |
2021-04-13 |
| 10971583 |
Gate cut isolation including air gap, integrated circuit including same and related method |
Hong Yu, Jiehui Shu |
2021-04-06 |
| 10957578 |
Single diffusion break device for FDSOI |
Wei Hong, Hsien-Ching Lo, Zhenyu Hu, Liu Jiang |
2021-03-23 |
| 10950692 |
Methods of forming air gaps between source/drain contacts and the resulting devices |
Ruilong Xie, Vimal Kamineni, Shesh Mani Pandey |
2021-03-16 |
| 10950610 |
Asymmetric gate cut isolation for SRAM |
Bipul C. Paul, Ruilong Xie, Julien Frougier, Daniel Chanemougame |
2021-03-16 |
| 10937693 |
Methods, apparatus and system for a local interconnect feature over an active region in a finFET device |
Ruilong Xie, Andreas Knorr, Haiting Wang |
2021-03-02 |
| 10937786 |
Gate cut structures |
Ruilong Xie, Laertis Economikos |
2021-03-02 |
| 10923469 |
Vertical resistor adjacent inactive gate over trench isolation |
Guowei Xu, Jiehui Shu, Ruilong Xie, Yurong Wen, Garo Derderian +2 more |
2021-02-16 |
| 10911382 |
Personalized message priority classification |
Jiangsheng Yu |
2021-02-02 |
| 10896853 |
Mask-free methods of forming structures in a semiconductor device |
Jiehui Shu, Rinus Tek Po Lee, Wei Hong, Hong Yu |
2021-01-19 |
| 10892338 |
Scaled gate contact and source/drain cap |
Ruilong Xie, Jae Gon Lee |
2021-01-12 |
| 10886178 |
Device with highly active acceptor doping and method of production thereof |
Tek Po Rinus Lee, Annie Levesque, Qun Gao, Rishikesh Krishnan, Bharat Krishnan +1 more |
2021-01-05 |
