Issued Patents 2021
Showing 25 most recent of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11210968 | Behavior-based interactive educational sessions | Lawrence A. Clevenger, Stefania Axo, Leigh Anne H. Clevenger, Krishna R. Tunga, Mahmoud Amin +4 more | 2021-12-28 |
| 11195755 | Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors | Kangguo Cheng, Juntao Li, Dexin Kong | 2021-12-07 |
| 11195754 | Transistor with reduced gate resistance and improved process margin of forming self-aligned contact | Kangguo Cheng, Juntao Li, Dexin Kong | 2021-12-07 |
| 11185658 | Internet of things (IOT) real-time response to defined symptoms | Mahmoud Amin, Krishna R. Tunga, Lawrence A. Clevenger, Leigh Anne H. Clevenger | 2021-11-30 |
| 11164958 | Nanosheet transistor having a strained channel with strain-preserving multi-segmented source/drain regions | Shogo Mochizuki, Nicolas Loubet, Richard A. Conti | 2021-11-02 |
| 11164959 | VFET devices with ILD protection | Kangguo Cheng, Juntao Li, Peng Xu | 2021-11-02 |
| 11158730 | Formation of inner spacer on nanosheet MOSFET | Kangguo Cheng, Juntao Li, Peng Xu | 2021-10-26 |
| 11145508 | Forming a fin cut in a hardmask | Kangguo Cheng, Juntao Li, Peng Xu | 2021-10-12 |
| 11131919 | Extreme ultraviolet (EUV) mask stack processing | Yongan Xu, Yann Mignot, Nelson Felix, Ekmini Anuja De Silva | 2021-09-28 |
| 11121044 | Vertically stacked nanosheet CMOS transistor | Kangguo Cheng, Juntao Li | 2021-09-14 |
| 11081546 | Isolation structure for stacked vertical transistors | Juntao Li, Kangguo Cheng, Chen Zhang | 2021-08-03 |
| 11075200 | Integrated device with vertical field-effect transistors and hybrid channels | Kangguo Cheng, Zheng Xu, Dexin Kong | 2021-07-27 |
| 11056399 | Source and drain EPI protective spacer during single diffusion break formation | Yao Yao, Andrew M. Greene, Veeraraghavan S. Basker, Kangguo Cheng, Ruilong Xie | 2021-07-06 |
| 11043493 | Stacked nanosheet complementary metal oxide semiconductor field effect transistor devices | Kangguo Cheng, Juntao Li | 2021-06-22 |
| 11022890 | Photoresist bridging defect removal by reverse tone weak developer | Karen E. Petrillo, Nicole Saulnier, Hao Tang | 2021-06-01 |
| 11024711 | Nanosheet FET bottom isolation | Ruqiang Bao, Kangguo Cheng, Zheng Xu | 2021-06-01 |
| 11024547 | Method and structure for forming vertical transistors with shared gates and separate gates | Kangguo Cheng, Juntao Li, Peng Xu | 2021-06-01 |
| 11022891 | Photoresist bridging defect removal by reverse tone weak developer | Karen E. Petrillo, Nicole Saulnier, Hao Tang | 2021-06-01 |
| 11011622 | Closely packed vertical transistors with reduced contact resistance | Kangguo Cheng, Juntao Li, Peng Xu | 2021-05-18 |
| 11011432 | Vertical silicon/silicon-germanium transistors with multiple threshold voltages | Kangguo Cheng, Juntao Li, Peng Xu | 2021-05-18 |
| 11004751 | Vertical transistor having reduced edge fin variation | Kangguo Cheng, Juntao Li, Dexin Kong | 2021-05-11 |
| 10998229 | Transistor with improved self-aligned contact | Kangguo Cheng, Juntao Li, Dexin Kong | 2021-05-04 |
| 10985279 | Source and drain epitaxy and isolation for gate structures | Kangguo Cheng, Juntao Li, Peng Xu | 2021-04-20 |
| 10985236 | Tunable on-chip nanosheet resistor | Kangguo Cheng, Wei Wang, Zheng Xu | 2021-04-20 |
| 10978576 | Techniques for vertical FET gate length control | Chi-Chun Liu, Chun Wing Yeung, Robin Hsin Kuo Chao, Kristin Schmidt, Yann Mignot | 2021-04-13 |