| 11199505 |
Machine learning enhanced optical-based screening for in-line wafer testing |
Robin Hsin Kuo Chao, Mary Breton, Huai Huang, Lawrence A. Clevenger |
2021-12-14 |
| 11195755 |
Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors |
Kangguo Cheng, Juntao Li, Zhenxing Bi |
2021-12-07 |
| 11195754 |
Transistor with reduced gate resistance and improved process margin of forming self-aligned contact |
Kangguo Cheng, Zhenxing Bi, Juntao Li |
2021-12-07 |
| 11189724 |
Method of forming a top epitaxy source/drain structure for a vertical transistor |
Kangguo Cheng, Shogo Mochizuki |
2021-11-30 |
| 11183636 |
Techniques for forming RRAM cells |
Kangguo Cheng, Juntao Li, Takashi Ando |
2021-11-23 |
| 11177319 |
RRAM device with spacer for electrode isolation |
Hiroyuki Miyazoe, Iqbal Rashid Saraf, Takashi Ando |
2021-11-16 |
| 11121318 |
Tunable forming voltage for RRAM device |
Kangguo Cheng, Juntao Li, Zheng Xu |
2021-09-14 |
| 11101322 |
RRAM cells in crossbar array architecture |
Takashi Ando, Kangguo Cheng, Juntao Li |
2021-08-24 |
| 11101323 |
RRAM cells in crossbar array architecture |
Takashi Ando, Kangguo Cheng, Juntao Li |
2021-08-24 |
| 11075200 |
Integrated device with vertical field-effect transistors and hybrid channels |
Zhenxing Bi, Kangguo Cheng, Zheng Xu |
2021-07-27 |
| 11043634 |
Confining filament at pillar center for memory devices |
Takashi Ando, Kangguo Cheng, Juntao Li |
2021-06-22 |
| 11011704 |
Forming RRAM cell structure with filament confinement |
Juntao Li, Kangguo Cheng, Takashi Ando |
2021-05-18 |
| 11004751 |
Vertical transistor having reduced edge fin variation |
Kangguo Cheng, Juntao Li, Zhenxing Bi |
2021-05-11 |
| 10998229 |
Transistor with improved self-aligned contact |
Kangguo Cheng, Zhenxing Bi, Juntao Li |
2021-05-04 |
| 10971549 |
Semiconductor memory device having a vertical active region |
Juntao Li, Kangguo Cheng, Takashi Ando |
2021-04-06 |
| 10903421 |
Controlling filament formation and location in a resistive random-access memory device |
Juntao Li, Takashi Ando, Kangguo Cheng |
2021-01-26 |
| 10886367 |
Forming FinFET with reduced variability |
Kangguo Cheng, Juntao Li, Zhenxing Bi |
2021-01-05 |
