| 11211429 |
Vertical intercalation device for neuromorphic computing |
Jianshi Tang, Reinaldo Vega |
2021-12-28 |
$7,175,000 |
| 11211379 |
Fabrication of field effect transistors with different threshold voltages through modified channel interfaces |
Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee |
2021-12-28 |
$7,175,000 |
| 11205698 |
Multiple work function nanosheet transistors with inner spacer modulation |
Ruilong Xie, Alexander Reznicek, Pouya Hashemi |
2021-12-21 |
$5,237,000 |
| 11195764 |
Vertical transport field-effect transistors having germanium channel surfaces |
Choonghyun Lee, Pouya Hashemi |
2021-12-07 |
$3,115,000 |
| 11195929 |
Conformal replacement gate electrode for short channel devices |
Ruqiang Bao, Masanobu Hatanaka, Vijay Narayanan, Yohei Ogawa, John Rozen |
2021-12-07 |
$3,115,000 |
| 11195911 |
Bottom dielectric isolation structure for nanosheet containing devices |
Ruilong Xie, Xin Miao, Jingyun Zhang |
2021-12-07 |
$3,115,000 |
| 11189712 |
Formation of vertical transport field-effect transistor structure having increased effective width |
Ruilong Xie, Alexander Reznicek, Pouya Hashemi |
2021-11-30 |
$2,996,000 |
| 11189661 |
FinFET 2T2R RRAM |
Alexander Reznicek, Pouya Hashemi, Choonghyun Lee, Jingyun Zhang |
2021-11-30 |
$2,996,000 |
| 11189786 |
Tapered resistive memory with interface dipoles |
Reinaldo Vega, Jianshi Tang, Praneet Adusumilli |
2021-11-30 |
$2,996,000 |
| 11183632 |
Self-aligned edge passivation for robust resistive random access memory connection |
Ruilong Xie, Pouya Hashemi, Alexander Reznicek |
2021-11-23 |
$2,653,000 |
| 11183636 |
Techniques for forming RRAM cells |
Kangguo Cheng, Juntao Li, Dexin Kong |
2021-11-23 |
$2,653,000 |
| 11177436 |
Resistive memory with embedded metal oxide fin for gradual switching |
Praneet Adusumilli, Jianshi Tang, Reinaldo Vega |
2021-11-16 |
$1,912,000 |
| 11177257 |
Fabrication of field effect transistors with different threshold voltages through modified channel interfaces |
Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee |
2021-11-16 |
$1,912,000 |
| 11177225 |
Semiconductor device including physical unclonable function |
Bahman Hekmatshoartabari, Alexander Reznicek, Nanbo Gong |
2021-11-16 |
$1,912,000 |
| 11177366 |
Gate induced drain leakage reduction in FinFETs |
Alexander Reznicek, Jingyun Zhang, Ruilong Xie |
2021-11-16 |
$1,912,000 |
| 11177319 |
RRAM device with spacer for electrode isolation |
Hiroyuki Miyazoe, Iqbal Rashid Saraf, Dexin Kong |
2021-11-16 |
$1,912,000 |
| 11165017 |
Replacement bottom electrode structure process to form misalignment tolerate MRAM with high yield |
Pouya Hashemi, Dimitri Houssameddine, Alexander Reznicek, Jingyun Zhang, Choonghyun Lee |
2021-11-02 |
$2,126,000 |
| 11164908 |
Vertical intercalation device for neuromorphic computing |
Jianshi Tang, Reinaldo Vega, Praneet Adusumilli |
2021-11-02 |
$2,126,000 |
| 11164907 |
Resistive random access memory integrated with stacked vertical transistors |
Karthik Balakrishnan, Bahman Hekmatshoartabari, Alexander Reznicek |
2021-11-02 |
$2,126,000 |
| 11158795 |
Resistive switching memory with replacement metal electrode |
Hiroyuki Miyazoe, Seyoung Kim, Vijay Narayanan |
2021-10-26 |
$2,874,000 |
| 11158793 |
Multivalent oxide spacers for analog switching resistive memory |
Ramachandran Muralidhar |
2021-10-26 |
$2,874,000 |
| 11158715 |
Vertical FET with asymmetric threshold voltage and channel thicknesses |
Choonghyun Lee, Jingyun Zhang, Pouya Hashemi, Alexander Reznicek |
2021-10-26 |
$2,874,000 |
| 11152264 |
Multi-Vt scheme with same dipole thickness for gate-all-around transistors |
Jingyun Zhang, Alexander Reznicek |
2021-10-19 |
$2,168,000 |
| 11152510 |
Long channel optimization for gate-all-around transistors |
Jingyun Zhang, Choonghyun Lee, Pouya Hashemi, Alexander Reznicek |
2021-10-19 |
$2,168,000 |
| 11152214 |
Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device |
John Bruley, Eduard A. Cartier, Martin M. Frank, Vijay Narayanan, John Rozen |
2021-10-19 |
$2,168,000 |
