Issued Patents 2021
Showing 1–25 of 95 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11211429 | Vertical intercalation device for neuromorphic computing | Jianshi Tang, Reinaldo Vega | 2021-12-28 |
| 11211379 | Fabrication of field effect transistors with different threshold voltages through modified channel interfaces | Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee | 2021-12-28 |
| 11205698 | Multiple work function nanosheet transistors with inner spacer modulation | Ruilong Xie, Alexander Reznicek, Pouya Hashemi | 2021-12-21 |
| 11195764 | Vertical transport field-effect transistors having germanium channel surfaces | Choonghyun Lee, Pouya Hashemi | 2021-12-07 |
| 11195929 | Conformal replacement gate electrode for short channel devices | Ruqiang Bao, Masanobu Hatanaka, Vijay Narayanan, Yohei Ogawa, John Rozen | 2021-12-07 |
| 11195911 | Bottom dielectric isolation structure for nanosheet containing devices | Ruilong Xie, Xin Miao, Jingyun Zhang | 2021-12-07 |
| 11189712 | Formation of vertical transport field-effect transistor structure having increased effective width | Ruilong Xie, Alexander Reznicek, Pouya Hashemi | 2021-11-30 |
| 11189661 | FinFET 2T2R RRAM | Alexander Reznicek, Pouya Hashemi, Choonghyun Lee, Jingyun Zhang | 2021-11-30 |
| 11189786 | Tapered resistive memory with interface dipoles | Reinaldo Vega, Jianshi Tang, Praneet Adusumilli | 2021-11-30 |
| 11183632 | Self-aligned edge passivation for robust resistive random access memory connection | Ruilong Xie, Pouya Hashemi, Alexander Reznicek | 2021-11-23 |
| 11183636 | Techniques for forming RRAM cells | Kangguo Cheng, Juntao Li, Dexin Kong | 2021-11-23 |
| 11177436 | Resistive memory with embedded metal oxide fin for gradual switching | Praneet Adusumilli, Jianshi Tang, Reinaldo Vega | 2021-11-16 |
| 11177257 | Fabrication of field effect transistors with different threshold voltages through modified channel interfaces | Ruqiang Bao, Hemanth Jagannathan, Choonghyun Lee | 2021-11-16 |
| 11177225 | Semiconductor device including physical unclonable function | Bahman Hekmatshoartabari, Alexander Reznicek, Nanbo Gong | 2021-11-16 |
| 11177366 | Gate induced drain leakage reduction in FinFETs | Alexander Reznicek, Jingyun Zhang, Ruilong Xie | 2021-11-16 |
| 11177319 | RRAM device with spacer for electrode isolation | Hiroyuki Miyazoe, Iqbal Rashid Saraf, Dexin Kong | 2021-11-16 |
| 11165017 | Replacement bottom electrode structure process to form misalignment tolerate MRAM with high yield | Pouya Hashemi, Dimitri Houssameddine, Alexander Reznicek, Jingyun Zhang, Choonghyun Lee | 2021-11-02 |
| 11164908 | Vertical intercalation device for neuromorphic computing | Jianshi Tang, Reinaldo Vega, Praneet Adusumilli | 2021-11-02 |
| 11164907 | Resistive random access memory integrated with stacked vertical transistors | Karthik Balakrishnan, Bahman Hekmatshoartabari, Alexander Reznicek | 2021-11-02 |
| 11158795 | Resistive switching memory with replacement metal electrode | Hiroyuki Miyazoe, Seyoung Kim, Vijay Narayanan | 2021-10-26 |
| 11158793 | Multivalent oxide spacers for analog switching resistive memory | Ramachandran Muralidhar | 2021-10-26 |
| 11158715 | Vertical FET with asymmetric threshold voltage and channel thicknesses | Choonghyun Lee, Jingyun Zhang, Pouya Hashemi, Alexander Reznicek | 2021-10-26 |
| 11152264 | Multi-Vt scheme with same dipole thickness for gate-all-around transistors | Jingyun Zhang, Alexander Reznicek | 2021-10-19 |
| 11152510 | Long channel optimization for gate-all-around transistors | Jingyun Zhang, Choonghyun Lee, Pouya Hashemi, Alexander Reznicek | 2021-10-19 |
| 11152214 | Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device | John Bruley, Eduard A. Cartier, Martin M. Frank, Vijay Narayanan, John Rozen | 2021-10-19 |