| 11195762 |
Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device |
Ruqiang Bao, Terence B. Hook, Hemanth Jagannathan |
2021-12-07 |
$3,115,000 |
| 11195929 |
Conformal replacement gate electrode for short channel devices |
Takashi Ando, Ruqiang Bao, Masanobu Hatanaka, Yohei Ogawa, John Rozen |
2021-12-07 |
$3,115,000 |
| 11158795 |
Resistive switching memory with replacement metal electrode |
Takashi Ando, Hiroyuki Miyazoe, Seyoung Kim |
2021-10-26 |
$2,874,000 |
| 11152214 |
Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device |
Takashi Ando, John Bruley, Eduard A. Cartier, Martin M. Frank, John Rozen |
2021-10-19 |
$2,168,000 |
| 11121209 |
Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor |
Takashi Ando, Eduard A. Cartier, Hemanth Jagannathan, Paul C. Jamison |
2021-09-14 |
$2,674,000 |
| 11043535 |
High-resistance memory devices |
Takashi Ando, Marwan H. Khater, Seyoung Kim, Hiroyuki Miyazoe |
2021-06-22 |
$6,016,000 |
| 11031301 |
Gate formation scheme for n-type and p-type transistors having separately tuned threshold voltages |
Ruqiang Bao, Unoh Kwon |
2021-06-08 |
$4,452,000 |
| 10997321 |
Encryption engine with an undetectable/tamper proof private key in late node CMOS technology |
Richard H. Boivie, Eduard A. Cartier, Daniel J. Friedman, Kohji Hosokawa, Charanjit Singh Jutla +10 more |
2021-05-04 |
$7,263,000 |
| 10991881 |
Method for controlling the forming voltage in resistive random access memory devices |
Steven P. Consiglio, Cory Wajda, Kandabara Tapily, Takaaki Tsunomura, Takashi Ando +3 more |
2021-04-27 |
|
| 10985075 |
Gate formation scheme for n-type and p-type transistors having separately tuned threshold voltages |
Ruqiang Bao, Unoh Kwon |
2021-04-20 |
$5,008,000 |
| 10978551 |
Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor |
Takashi Ando, Eduard A. Cartier, Hemanth Jagannathan, Paul C. Jamison |
2021-04-13 |
$3,936,000 |
| 10957937 |
Three-terminal copper-driven neuromorphic device |
Teodor K. Todorov, Takashi Ando, John Rozen |
2021-03-23 |
$2,115,000 |
| 10957696 |
Self-aligned metal gate with poly silicide for vertical transport field-effect transistors |
Brent A. Anderson, Ruqiang Bao, Dechao Guo |
2021-03-23 |
$2,115,000 |
| 10916432 |
Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device |
Takashi Ando, Pouya Hashemi, Hemanth Jagannathan, Choonghyun Lee |
2021-02-09 |
$3,536,000 |
| 10903425 |
Oxygen vacancy and filament-loss protection for resistive switching devices |
Takashi Ando, Hiroyuki Miyazoe, Seyoung Kim |
2021-01-26 |
$1,788,000 |
| 10892339 |
Gate first technique in vertical transport FET using doped silicon gates with silicide |
Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison, Choonghyun Lee, Sanjay C. Mehta |
2021-01-12 |
$3,912,000 |
