Issued Patents 2021
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11195762 | Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device | Ruqiang Bao, Terence B. Hook, Hemanth Jagannathan | 2021-12-07 |
| 11195929 | Conformal replacement gate electrode for short channel devices | Takashi Ando, Ruqiang Bao, Masanobu Hatanaka, Yohei Ogawa, John Rozen | 2021-12-07 |
| 11158795 | Resistive switching memory with replacement metal electrode | Takashi Ando, Hiroyuki Miyazoe, Seyoung Kim | 2021-10-26 |
| 11152214 | Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device | Takashi Ando, John Bruley, Eduard A. Cartier, Martin M. Frank, John Rozen | 2021-10-19 |
| 11121209 | Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor | Takashi Ando, Eduard A. Cartier, Hemanth Jagannathan, Paul C. Jamison | 2021-09-14 |
| 11043535 | High-resistance memory devices | Takashi Ando, Marwan H. Khater, Seyoung Kim, Hiroyuki Miyazoe | 2021-06-22 |
| 11031301 | Gate formation scheme for n-type and p-type transistors having separately tuned threshold voltages | Ruqiang Bao, Unoh Kwon | 2021-06-08 |
| 10997321 | Encryption engine with an undetectable/tamper proof private key in late node CMOS technology | Richard H. Boivie, Eduard A. Cartier, Daniel J. Friedman, Kohji Hosokawa, Charanjit Singh Jutla +10 more | 2021-05-04 |
| 10991881 | Method for controlling the forming voltage in resistive random access memory devices | Steven P. Consiglio, Cory Wajda, Kandabara Tapily, Takaaki Tsunomura, Takashi Ando +3 more | 2021-04-27 |
| 10985075 | Gate formation scheme for n-type and p-type transistors having separately tuned threshold voltages | Ruqiang Bao, Unoh Kwon | 2021-04-20 |
| 10978551 | Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor | Takashi Ando, Eduard A. Cartier, Hemanth Jagannathan, Paul C. Jamison | 2021-04-13 |
| 10957937 | Three-terminal copper-driven neuromorphic device | Teodor K. Todorov, Takashi Ando, John Rozen | 2021-03-23 |
| 10957696 | Self-aligned metal gate with poly silicide for vertical transport field-effect transistors | Brent A. Anderson, Ruqiang Bao, Dechao Guo | 2021-03-23 |
| 10916432 | Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device | Takashi Ando, Pouya Hashemi, Hemanth Jagannathan, Choonghyun Lee | 2021-02-09 |
| 10903425 | Oxygen vacancy and filament-loss protection for resistive switching devices | Takashi Ando, Hiroyuki Miyazoe, Seyoung Kim | 2021-01-26 |
| 10892339 | Gate first technique in vertical transport FET using doped silicon gates with silicide | Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison, Choonghyun Lee, Sanjay C. Mehta | 2021-01-12 |