Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device

Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device

US Patent 11195762 · Granted Dec 7, 2021

Estimated economic value: $3,115,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Non-overlapping gate conductors for GAA transistors2025
Vertical field effect transistor with minimal contact to gate erosion2025
Stacked field effect transistor structure with independent gate control between 2025
Vertical transistor with reduced cell height2025
Multi-VT solution for replacement metal gate bonded stacked FET2025
Stacked FETS including devices with thick gate oxide2025
High density stacked vertical transistor static random access memory structure2025
Looped long channel field-effect transistor2025
Late gate extension2025
Mobile check deposit2025
Gate-all-around nanosheet field effect transistor integrated with fin field effe2025
Middle of line structure with stacked devices2025