| 11205698 |
Multiple work function nanosheet transistors with inner spacer modulation |
Takashi Ando, Ruilong Xie, Pouya Hashemi |
2021-12-21 |
$5,237,000 |
| 11205728 |
Vertical field effect transistor with reduced parasitic capacitance |
Choonghyun Lee, Xin Miao, Jingyun Zhang |
2021-12-21 |
$5,237,000 |
| 11201092 |
Gate channel length control in VFET |
Injo Ok, Choonghyun Lee, Soon-Cheon Seo |
2021-12-14 |
$4,192,000 |
| 11201241 |
Vertical field effect transistor and method of manufacturing a vertical field effect transistor |
Choonghyun Lee, Xin Miao, Richard Southwick |
2021-12-14 |
$4,192,000 |
| 11201153 |
Stacked field effect transistor with wrap-around contacts |
Ruilong Xie, Chun-Chen Yeh, Dechao Guo |
2021-12-14 |
$4,192,000 |
| 11201242 |
Structure to enable titanium contact liner on pFET source/drain regions |
Veeraraghavan S. Basker, Keith E. Fogel, Nicole S. Munro |
2021-12-14 |
$4,192,000 |
| 11196000 |
Low forming voltage non-volatile memory (NVM) |
Youngseok Kim, Injo Ok, Soon-Cheon Seo |
2021-12-07 |
$3,115,000 |
| 11189725 |
VTFET with cell height constraints |
Heng Wu, Ruilong Xie, Lan Yu, Junli Wang |
2021-11-30 |
$2,996,000 |
| 11189661 |
FinFET 2T2R RRAM |
Takashi Ando, Pouya Hashemi, Choonghyun Lee, Jingyun Zhang |
2021-11-30 |
$2,996,000 |
| 11187672 |
Superhydrophobic electrode and biosensing device using the same |
Ali Afzali-Ardakani, Karthik Balakrishnan, Stephen W. Bedell, Pouya Hashemi, Bahman Hekmatshoartabari |
2021-11-30 |
$2,996,000 |
| 11189701 |
Bipolar junction transistor with vertically integrated resistor |
Bahman Hekmatshoartabari, Karthik Balakrishnan |
2021-11-30 |
$2,996,000 |
| 11189712 |
Formation of vertical transport field-effect transistor structure having increased effective width |
Ruilong Xie, Takashi Ando, Pouya Hashemi |
2021-11-30 |
$2,996,000 |
| 11183632 |
Self-aligned edge passivation for robust resistive random access memory connection |
Takashi Ando, Ruilong Xie, Pouya Hashemi |
2021-11-23 |
$2,653,000 |
| 11183558 |
Nanosheet transistor having partially self-limiting bottom isolation extending into the substrate and under the source/drain and gate regions |
Chun-Chen Yeh, Veeraraghavan S. Basker, Junli Wang |
2021-11-23 |
$2,653,000 |
| 11177225 |
Semiconductor device including physical unclonable function |
Bahman Hekmatshoartabari, Takashi Ando, Nanbo Gong |
2021-11-16 |
$1,912,000 |
| 11177258 |
Stacked nanosheet CFET with gate all around structure |
Ruilong Xie, Heng Wu, Lan Yu |
2021-11-16 |
$1,912,000 |
| 11177366 |
Gate induced drain leakage reduction in FinFETs |
Takashi Ando, Jingyun Zhang, Ruilong Xie |
2021-11-16 |
$1,912,000 |
| 11177372 |
Stacked vertical transport field effect transistor electrically erasable programmable read only memory (EEPROM) devices |
Karthik Balakrishnan, Jeng-Bang Yau, Tak H. Ning |
2021-11-16 |
$1,912,000 |
| 11177370 |
Vertical field effect transistor with self-aligned source and drain top junction |
Ruilong Xie, Chun-Chen Yeh, Chen Zhang |
2021-11-16 |
$1,912,000 |
| 11164907 |
Resistive random access memory integrated with stacked vertical transistors |
Karthik Balakrishnan, Bahman Hekmatshoartabari, Takashi Ando |
2021-11-02 |
$2,126,000 |
| 11165017 |
Replacement bottom electrode structure process to form misalignment tolerate MRAM with high yield |
Pouya Hashemi, Takashi Ando, Dimitri Houssameddine, Jingyun Zhang, Choonghyun Lee |
2021-11-02 |
$2,126,000 |
| 11164792 |
Complementary field-effect transistors |
Ruilong Xie, Jingyun Zhang, Junli Wang |
2021-11-02 |
$2,126,000 |
| 11164960 |
Transistor having in-situ doped nanosheets with gradient doped channel regions |
Jingyun Zhang, Ruilong Xie |
2021-11-02 |
$2,126,000 |
| 11164782 |
Self-aligned gate contact compatible cross couple contact formation |
Ruilong Xie, Balasubramanian S. Pranatharthi Haran, Dechao Guo, Nicolas Loubet |
2021-11-02 |
$2,126,000 |
| 11164793 |
Reduced source/drain coupling for CFET |
Ruilong Xie, Chanro Park, Chun-Chen Yeh |
2021-11-02 |
$2,126,000 |
