| 11196001 |
3D ReRAM formed by metal-assisted chemical etching with replacement wordline and wordline separation |
Xin Miao, Kangguo Cheng, Wenyu Xu |
2021-12-07 |
$3,115,000 |
| 11190809 |
Mode dependent intra smoothing filter table mapping methods for non-square prediction units |
Guichun Li, Lingzhi Liu, Changcai Lai, Nam Ling, Jianhua Zheng |
2021-11-30 |
|
| 11177370 |
Vertical field effect transistor with self-aligned source and drain top junction |
Ruilong Xie, Chun-Chen Yeh, Alexander Reznicek |
2021-11-16 |
$1,912,000 |
| 11177369 |
Stacked vertical field effect transistor with self-aligned junctions |
Lan Yu, Xin Miao, Heng Wu, Kangguo Cheng |
2021-11-16 |
$1,912,000 |
| 11171221 |
VFET bottom epitaxy formed with anchors |
Tenko Yamashita |
2021-11-09 |
$5,376,000 |
| 11161556 |
Active front splitter for automobile |
Jie Xu, Xiaogang Gui, Miaotian Lin |
2021-11-02 |
|
| 11164791 |
Contact formation for stacked vertical transport field-effect transistors |
Heng Wu, Tenko Yamashita, Joshua M. Rubin |
2021-11-02 |
$2,126,000 |
| 11164940 |
Method of forming III-V on insulator structure on semiconductor substrate |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2021-11-02 |
$2,126,000 |
| 11164799 |
Stacked vertical transport field effect transistor contact formation |
Heng Wu, Kangguo Cheng, Tenko Yamashita |
2021-11-02 |
$2,126,000 |
| 11152500 |
Tunneling field-effect transistor and method for manufacturing tunneling field-effect transistor |
Jing Zhao |
2021-10-19 |
|
| 11152507 |
Vertical field-effect transistor with a bottom contact that exhibits low electrical resistance |
Tenko Yamashita, Terence B. Hook, Brent A. Anderson |
2021-10-19 |
$2,168,000 |
| 11139215 |
Hybrid gate stack integration for stacked vertical transport field-effect transistors |
Tenko Yamashita, Takashi Ando, Oleg Gluschenkov, Koji Watanabe |
2021-10-05 |
$5,888,000 |
| 11121215 |
iFinFET |
Juntao Li, Kangguo Cheng, Xin Miao |
2021-09-14 |
$2,674,000 |
| 11120845 |
Voltage regulation circuit |
Yangyang Tang, Enyi Yao |
2021-09-14 |
|
| 11115374 |
Source-aware technique for facilitating LISP host mobility |
Zhang Xiaopu, Li Yan, Marco Pessi, Wei Ling, Michael David Tracy +1 more |
2021-09-07 |
$39,116,000 |
| 11107905 |
Vertical field effect transistors with self aligned source/drain junctions |
Xin Miao, Kangguo Cheng, Wenyu Xu |
2021-08-31 |
$6,618,000 |
| 11101181 |
Junction formation in thick-oxide and thin-oxide vertical FETs on the same chip |
Xin Miao, Kangguo Cheng, Wenyu Xu |
2021-08-24 |
$4,861,000 |
| 11094798 |
Vertical FET with symmetric junctions |
Lan Yu, Xin Miao, Heng Wu, Kangguo Cheng |
2021-08-17 |
$3,119,000 |
| 11081546 |
Isolation structure for stacked vertical transistors |
Juntao Li, Kangguo Cheng, Zhenxing Bi |
2021-08-03 |
$4,187,000 |
| 11081400 |
Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2021-08-03 |
$4,187,000 |
| 11081482 |
Fabrication of vertical fin field effect transistors having top air spacers and a self aligned top junction |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2021-08-03 |
$4,187,000 |
| 11069679 |
Reducing gate resistance in stacked vertical transport field effect transistors |
Heng Wu, Kangguo Cheng, Tenko Yamashita, Joshua M. Rubin |
2021-07-20 |
$5,541,000 |
| 11069800 |
Single electron transistor with gap tunnel barriers |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2021-07-20 |
$5,541,000 |
| 11062959 |
Inner spacer and junction formation for integrating extended-gate and standard-gate nanosheet transistors |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2021-07-13 |
$4,436,000 |
| 11062965 |
Flipped vertical field-effect-transistor |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2021-07-13 |
$4,436,000 |
