Issued Patents 2021
Showing 25 most recent of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11196001 | 3D ReRAM formed by metal-assisted chemical etching with replacement wordline and wordline separation | Xin Miao, Kangguo Cheng, Chen Zhang | 2021-12-07 |
| 11183389 | Fin field effect transistor devices with self-aligned gates | Stuart A. Sieg, Ruilong Xie, John R. Sporre | 2021-11-23 |
| 11164940 | Method of forming III-V on insulator structure on semiconductor substrate | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-11-02 |
| 11107905 | Vertical field effect transistors with self aligned source/drain junctions | Xin Miao, Chen Zhang, Kangguo Cheng | 2021-08-31 |
| 11101181 | Junction formation in thick-oxide and thin-oxide vertical FETs on the same chip | Xin Miao, Kangguo Cheng, Chen Zhang | 2021-08-24 |
| 11081400 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-08-03 |
| 11081482 | Fabrication of vertical fin field effect transistors having top air spacers and a self aligned top junction | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-08-03 |
| 11069800 | Single electron transistor with gap tunnel barriers | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-07-20 |
| 11062965 | Flipped vertical field-effect-transistor | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-07-13 |
| 11062959 | Inner spacer and junction formation for integrating extended-gate and standard-gate nanosheet transistors | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-07-13 |
| 11049935 | Non-planar field effect transistor devices with low-resistance metallic gate structures | Kangguo Cheng, Chen Zhang, Xin Miao | 2021-06-29 |
| 11038015 | Non-planar field effect transistor devices with low-resistance metallic gate structures | Kangguo Cheng, Chen Zhang, Xin Miao | 2021-06-15 |
| 11011411 | Semiconductor wafer having integrated circuits with bottom local interconnects | Chen Zhang, Xin Miao, Kangguo Cheng | 2021-05-18 |
| 10991798 | Replacement sacrificial nanosheets having improved etch selectivity | Chen Zhang, Kangguo Cheng, Xin Miao | 2021-04-27 |
| 10985073 | Vertical field effect transistor replacement metal gate fabrication | Ruilong Xie, Brent A. Anderson, Zuoguang Liu | 2021-04-20 |
| 10985161 | Single diffusion break isolation for gate-all-around field-effect transistor devices | Xin Miao, Chen Zhang, Kangguo Cheng | 2021-04-20 |
| 10971585 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between adjacent gates | Choonghyun Lee, Injo Ok, Soon-Cheon Seo | 2021-04-06 |
| 10971522 | High mobility complementary metal-oxide-semiconductor (CMOS) devices with fins on insulator | Xin Miao, Chen Zhang, Kangguo Cheng | 2021-04-06 |
| 10964602 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-03-30 |
| 10964601 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-03-30 |
| 10957601 | Self-aligned fin recesses in nanosheet field effect transistors | Zhenxing Bi, Kangguo Cheng, Xin Miao | 2021-03-23 |
| 10957798 | Nanosheet transistors with transverse strained channel regions | Xin Miao, Kangguo Cheng, Chen Zhang | 2021-03-23 |
| 10957783 | Fin cut etch process for vertical transistor devices | Chen Zhang, Kangguo Cheng, Xin Miao | 2021-03-23 |
| 10944013 | Self-aligned source/drain contact for vertical field effect transistor | Chen Zhang, Kangguo Cheng, Xin Miao | 2021-03-09 |
| 10937890 | Vertical field-effect transistor late gate recess process with improved inter-layer dielectric protection | Ruilong Xie, Pietro Montanini, Hemanth Jagannathan | 2021-03-02 |