Issued Patents 2021
Showing 26–50 of 63 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11049935 | Non-planar field effect transistor devices with low-resistance metallic gate structures | Kangguo Cheng, Wenyu Xu, Xin Miao | 2021-06-29 |
| 11038015 | Non-planar field effect transistor devices with low-resistance metallic gate structures | Kangguo Cheng, Wenyu Xu, Xin Miao | 2021-06-15 |
| 11011411 | Semiconductor wafer having integrated circuits with bottom local interconnects | Xin Miao, Wenyu Xu, Kangguo Cheng | 2021-05-18 |
| 11011643 | Nanosheet FET including encapsulated all-around source/drain contact | Peng Xu, Chun Wing Yeung | 2021-05-18 |
| 11011528 | Asymmetric gate edge spacing for SRAM structures | Alexander Reznicek, Ruilong Xie, Chun-Chen Yeh | 2021-05-18 |
| 11004856 | Stacked vertical transistor memory cell with epi connections | Tenko Yamashita, Kangguo Cheng, Heng Wu | 2021-05-11 |
| 10998233 | Mechanically stable complementary field effect transistors | Ruilong Xie, Alexander Reznicek, Chun-Chen Yeh | 2021-05-04 |
| 10991619 | Top via process accounting for misalignment by increasing reliability | Lawrence A. Clevenger, Benjamin D. Briggs, Brent A. Anderson, Chih-Chao Yang | 2021-04-27 |
| D917575 | Handheld tire inflator | — | 2021-04-27 |
| 10991798 | Replacement sacrificial nanosheets having improved etch selectivity | Wenyu Xu, Kangguo Cheng, Xin Miao | 2021-04-27 |
| 10991797 | Self-aligned two-dimensional material transistors | Peng Xu, Chun Wing Yeung | 2021-04-27 |
| 10984839 | Voltage regulation circuit | Yangyang Tang, Enyi Yao | 2021-04-20 |
| 10985161 | Single diffusion break isolation for gate-all-around field-effect transistor devices | Wenyu Xu, Xin Miao, Kangguo Cheng | 2021-04-20 |
| 10985064 | Buried power and ground in stacked vertical transport field effect transistors | Heng Wu, Kangguo Cheng, Tenko Yamashita | 2021-04-20 |
| 10971522 | High mobility complementary metal-oxide-semiconductor (CMOS) devices with fins on insulator | Xin Miao, Kangguo Cheng, Wenyu Xu | 2021-04-06 |
| 10964602 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Wenyu Xu | 2021-03-30 |
| 10964603 | Hybrid gate stack integration for stacked vertical transport field-effect transistors | Tenko Yamashita, Takashi Ando, Oleg Gluschenkov, Koji Watanabe | 2021-03-30 |
| 10964601 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Wenyu Xu | 2021-03-30 |
| 10957693 | Vertical transistors with different gate lengths | Xin Miao, Kangguo Cheng, Juntao Li | 2021-03-23 |
| 10957798 | Nanosheet transistors with transverse strained channel regions | Xin Miao, Kangguo Cheng, Wenyu Xu | 2021-03-23 |
| 10957783 | Fin cut etch process for vertical transistor devices | Wenyu Xu, Kangguo Cheng, Xin Miao | 2021-03-23 |
| 10957763 | Gate fill utilizing replacement spacer | Chun Wing Yeung | 2021-03-23 |
| 10957605 | VFET device design for top contact resistance measurement | Zuoguang Liu | 2021-03-23 |
| 10950545 | Circuit wiring techniques for stacked transistor structures | Dongbing Shao, Zheng Xu, Tenko Yamashita | 2021-03-16 |
| 10944013 | Self-aligned source/drain contact for vertical field effect transistor | Wenyu Xu, Kangguo Cheng, Xin Miao | 2021-03-09 |