| 11189725 |
VTFET with cell height constraints |
Ruilong Xie, Lan Yu, Alexander Reznicek, Junli Wang |
2021-11-30 |
$2,996,000 |
| 11189713 |
Nanosheet transistor having wrap-around bottom isolation |
Ruilong Xie, Lan Yu, Kangguo Cheng |
2021-11-30 |
$2,996,000 |
| 11183577 |
Formation of air gap spacers for reducing parasitic capacitance |
Kangguo Cheng, Peng Xu, Choonghyun Lee |
2021-11-23 |
$2,653,000 |
| 11177258 |
Stacked nanosheet CFET with gate all around structure |
Ruilong Xie, Alexander Reznicek, Lan Yu |
2021-11-16 |
$1,912,000 |
| 11177369 |
Stacked vertical field effect transistor with self-aligned junctions |
Lan Yu, Xin Miao, Chen Zhang, Kangguo Cheng |
2021-11-16 |
$1,912,000 |
| 11177367 |
Self-aligned bottom spacer EPI last flow for VTFET |
Tao Li, Ruilong Xie, Sung-Dae Suk |
2021-11-16 |
$1,912,000 |
| 11164799 |
Stacked vertical transport field effect transistor contact formation |
Chen Zhang, Kangguo Cheng, Tenko Yamashita |
2021-11-02 |
$2,126,000 |
| 11164947 |
Wrap around contact formation for VTFET |
Ruilong Xie, Shogo Mochizuki, Lan Yu |
2021-11-02 |
$2,126,000 |
| 11164870 |
Stacked upper fin and lower fin transistor with separate gate |
Ruilong Xie, Chun Wing Yeung, Lan Yu |
2021-11-02 |
$2,126,000 |
| 11164791 |
Contact formation for stacked vertical transport field-effect transistors |
Tenko Yamashita, Chen Zhang, Joshua M. Rubin |
2021-11-02 |
$2,126,000 |
| 11158543 |
Silicide formation for source/drain contact in a vertical transport field-effect transistor |
Su Chen Fan, Ruilong Xie, Huai Huang |
2021-10-26 |
$2,874,000 |
| 11145380 |
Analog nonvolatile memory cells using dopant activation |
Tenko Yamashita, Oleg Gluschenkov, Alexander Reznicek |
2021-10-12 |
$3,967,000 |
| 11094798 |
Vertical FET with symmetric junctions |
Lan Yu, Xin Miao, Chen Zhang, Kangguo Cheng |
2021-08-17 |
$3,119,000 |
| 11081567 |
Replacement-channel fabrication of III-V nanosheet devices |
Jingyun Zhang, Choonghyun Lee, Chun Wing Yeung, Robin Hsin Kuo Chao |
2021-08-03 |
$4,187,000 |
| 11075334 |
Spin-orbit-torque magneto-resistive random access memory with stepped bottom electrode |
Alexander Reznicek, Ruilong Xie, Lan Yu |
2021-07-27 |
$4,187,000 |
| 11069679 |
Reducing gate resistance in stacked vertical transport field effect transistors |
Chen Zhang, Kangguo Cheng, Tenko Yamashita, Joshua M. Rubin |
2021-07-20 |
$5,541,000 |
| 11062960 |
Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devices |
Kangguo Cheng, Junli Wang, Zuoguang Liu |
2021-07-13 |
$4,436,000 |
| 11056588 |
Vertical transport field effect transistor with bottom source/drain |
Gen Tsutsui, Lan Yu, Ruilong Xie |
2021-07-06 |
$5,313,000 |
| 11049953 |
Nanosheet transistor |
Kangguo Cheng, Juntao Li, Peng Xu |
2021-06-29 |
$23,779,000 |
| 11049940 |
Method and structure for forming silicon germanium finFET |
Peng Xu, Kangguo Cheng, Juntao Li |
2021-06-29 |
$5,149,000 |
| 11037905 |
Formation of stacked vertical transport field effect transistors |
Gen Tsutsui, Tenko Yamashita |
2021-06-15 |
$4,393,000 |
| 11024670 |
Forming an MRAM device over a transistor |
Alexander Reznicek, Ruilong Xie, Lan Yu |
2021-06-01 |
$4,052,000 |
| 11024369 |
Static random-access memory cell design |
Lan Yu, Junli Wang, Ruqiang Bao, Dechao Guo |
2021-06-01 |
$4,052,000 |
| 11011617 |
Formation of a partial air-gap spacer |
Choonghyun Lee, Kangguo Cheng, Peng Xu |
2021-05-18 |
$4,116,000 |
| 11011517 |
Semiconductor structure including first FinFET devices for low power applications and second FinFET devices for high power applications |
Lan Yu, Junli Wang, Ruqiang Bao, Dechao Guo |
2021-05-18 |
$4,116,000 |
