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Home › Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devices

Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devices

US Patent 11062960 · Granted Jul 13, 2021

Estimated economic value: $4,436,000 ⓘ

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