Issued Patents 2021
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11189713 | Nanosheet transistor having wrap-around bottom isolation | Ruilong Xie, Heng Wu, Kangguo Cheng | 2021-11-30 |
| 11189725 | VTFET with cell height constraints | Heng Wu, Ruilong Xie, Alexander Reznicek, Junli Wang | 2021-11-30 |
| 11177369 | Stacked vertical field effect transistor with self-aligned junctions | Xin Miao, Chen Zhang, Heng Wu, Kangguo Cheng | 2021-11-16 |
| 11177258 | Stacked nanosheet CFET with gate all around structure | Ruilong Xie, Alexander Reznicek, Heng Wu | 2021-11-16 |
| 11164870 | Stacked upper fin and lower fin transistor with separate gate | Heng Wu, Ruilong Xie, Chun Wing Yeung | 2021-11-02 |
| 11164947 | Wrap around contact formation for VTFET | Heng Wu, Ruilong Xie, Shogo Mochizuki | 2021-11-02 |
| 11094798 | Vertical FET with symmetric junctions | Xin Miao, Chen Zhang, Heng Wu, Kangguo Cheng | 2021-08-17 |
| 11075334 | Spin-orbit-torque magneto-resistive random access memory with stepped bottom electrode | Alexander Reznicek, Ruilong Xie, Heng Wu | 2021-07-27 |
| 11056588 | Vertical transport field effect transistor with bottom source/drain | Heng Wu, Gen Tsutsui, Ruilong Xie | 2021-07-06 |
| 11024670 | Forming an MRAM device over a transistor | Alexander Reznicek, Ruilong Xie, Heng Wu | 2021-06-01 |
| 11024369 | Static random-access memory cell design | Junli Wang, Heng Wu, Ruqiang Bao, Dechao Guo | 2021-06-01 |
| 11011517 | Semiconductor structure including first FinFET devices for low power applications and second FinFET devices for high power applications | Junli Wang, Heng Wu, Ruqiang Bao, Dechao Guo | 2021-05-18 |
| 11004984 | Low resistivity epitaxially formed contact region for nanosheet external resistance reduction | Heng Wu, Oleg Gluschenkov, Ruilong Xie | 2021-05-11 |
| 10943989 | Gate to source/drain leakage reduction in nanosheet transistors via inner spacer optimization | Heng Wu, Ruqiang Bao, Junli Wang, Dechao Guo | 2021-03-09 |
| 10910470 | Nanosheet transistors with inner airgaps | Heng Wu, Ruilong Xie, Alexander Reznicek | 2021-02-02 |