| 11189713 |
Nanosheet transistor having wrap-around bottom isolation |
Ruilong Xie, Heng Wu, Kangguo Cheng |
2021-11-30 |
| 11189725 |
VTFET with cell height constraints |
Heng Wu, Ruilong Xie, Alexander Reznicek, Junli Wang |
2021-11-30 |
| 11177369 |
Stacked vertical field effect transistor with self-aligned junctions |
Xin Miao, Chen Zhang, Heng Wu, Kangguo Cheng |
2021-11-16 |
| 11177258 |
Stacked nanosheet CFET with gate all around structure |
Ruilong Xie, Alexander Reznicek, Heng Wu |
2021-11-16 |
| 11164870 |
Stacked upper fin and lower fin transistor with separate gate |
Heng Wu, Ruilong Xie, Chun Wing Yeung |
2021-11-02 |
| 11164947 |
Wrap around contact formation for VTFET |
Heng Wu, Ruilong Xie, Shogo Mochizuki |
2021-11-02 |
| 11094798 |
Vertical FET with symmetric junctions |
Xin Miao, Chen Zhang, Heng Wu, Kangguo Cheng |
2021-08-17 |
| 11075334 |
Spin-orbit-torque magneto-resistive random access memory with stepped bottom electrode |
Alexander Reznicek, Ruilong Xie, Heng Wu |
2021-07-27 |
| 11056588 |
Vertical transport field effect transistor with bottom source/drain |
Heng Wu, Gen Tsutsui, Ruilong Xie |
2021-07-06 |
| 11024670 |
Forming an MRAM device over a transistor |
Alexander Reznicek, Ruilong Xie, Heng Wu |
2021-06-01 |
| 11024369 |
Static random-access memory cell design |
Junli Wang, Heng Wu, Ruqiang Bao, Dechao Guo |
2021-06-01 |
| 11011517 |
Semiconductor structure including first FinFET devices for low power applications and second FinFET devices for high power applications |
Junli Wang, Heng Wu, Ruqiang Bao, Dechao Guo |
2021-05-18 |
| 11004984 |
Low resistivity epitaxially formed contact region for nanosheet external resistance reduction |
Heng Wu, Oleg Gluschenkov, Ruilong Xie |
2021-05-11 |
| 10943989 |
Gate to source/drain leakage reduction in nanosheet transistors via inner spacer optimization |
Heng Wu, Ruqiang Bao, Junli Wang, Dechao Guo |
2021-03-09 |
| 10910470 |
Nanosheet transistors with inner airgaps |
Heng Wu, Ruilong Xie, Alexander Reznicek |
2021-02-02 |
