{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Formation of a partial air-gap spacer", "item": "https://www.patentleaderboard.com/patent/11011617"}]}
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Home › Formation of a partial air-gap spacer

Formation of a partial air-gap spacer

US Patent 11011617 · Granted May 18, 2021

Estimated economic value: $4,116,000 ⓘ

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