| 11195912 |
Inner spacer for nanosheet transistors |
Kangguo Cheng, Choonghyun Lee, Juntao Li |
2021-12-07 |
$3,115,000 |
| 11189729 |
Forming a sacrificial liner for dual channel devices |
Huiming Bu, Kangguo Cheng, Dechao Guo, Sivananda K. Kanakasabapathy |
2021-11-30 |
$13,665,000 |
| 11183593 |
Three-dimensional field effect device |
Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Nicolas Loubet |
2021-11-23 |
$2,653,000 |
| 11183577 |
Formation of air gap spacers for reducing parasitic capacitance |
Kangguo Cheng, Choonghyun Lee, Heng Wu |
2021-11-23 |
$2,653,000 |
| 11183430 |
Self-limiting liners for increasing contact trench volume in n-type and p-type transistors |
Kangguo Cheng, Choonghyun Lee, Juntao Li |
2021-11-23 |
$2,653,000 |
| 11164959 |
VFET devices with ILD protection |
Zhenxing Bi, Kangguo Cheng, Juntao Li |
2021-11-02 |
$2,126,000 |
| 11158730 |
Formation of inner spacer on nanosheet MOSFET |
Zhenxing Bi, Kangguo Cheng, Juntao Li |
2021-10-26 |
$2,874,000 |
| 11142770 |
Isolated oleaginous yeast |
Gregory Stephanopoulos, Kangjian Qiao |
2021-10-12 |
|
| 11145425 |
Grain boundary enhanced UN and U3Si2 pellets with improved oxidation resistance |
Edward J. Lahoda, Robert L. Oelrich, Jr., Hemant Shah, Jonathan WRIGHT, Lu Cai |
2021-10-12 |
|
| 11145508 |
Forming a fin cut in a hardmask |
Zhenxing Bi, Kangguo Cheng, Juntao Li |
2021-10-12 |
$3,967,000 |
| 11120991 |
Lateral semiconductor nanotube with hexagonal shape |
Juntao Li, Kangguo Cheng, Choonghyun Lee |
2021-09-14 |
$2,674,000 |
| 11101182 |
Nanosheet transistors with different gate dielectrics and workfunction metals |
Kangguo Cheng, Choonghyun Lee, Juntao Li |
2021-08-24 |
$4,861,000 |
| 11094824 |
Forming a sacrificial liner for dual channel devices |
Huiming Bu, Kangguo Cheng, Dechao Guo, Sivananda K. Kanakasabapathy |
2021-08-17 |
$20,526,000 |
| 11069577 |
Nanosheet transistors with different gate dielectrics and workfunction metals |
Kangguo Cheng, Choonghyun Lee, Juntao Li |
2021-07-20 |
$5,541,000 |
| 11063129 |
Self-limiting fin spike removal |
Kangguo Cheng, Choonghyun Lee, Juntao Li |
2021-07-13 |
|
| 11049622 |
Method to pressurize sic fuel cladding tube before end plug sealing by pressurization pushing spring loaded end plug |
Robert L. Oelrich, Jr. |
2021-06-29 |
|
| 11049940 |
Method and structure for forming silicon germanium finFET |
Kangguo Cheng, Juntao Li, Heng Wu |
2021-06-29 |
$5,149,000 |
| 11049953 |
Nanosheet transistor |
Kangguo Cheng, Juntao Li, Heng Wu |
2021-06-29 |
$23,779,000 |
| 11043308 |
Duplex accident tolerant coating for nuclear fuel rods |
Edward J. Lahoda, Robert L. Oelrich, Jr., Kumar Sridharan, Benjamin Maier, Greg Johnson |
2021-06-22 |
|
| 11043429 |
Semiconductor fins with dielectric isolation at fin bottom |
Kangguo Cheng, Jay William Strane |
2021-06-22 |
$6,016,000 |
| 11024547 |
Method and structure for forming vertical transistors with shared gates and separate gates |
Zhenxing Bi, Kangguo Cheng, Juntao Li |
2021-06-01 |
$4,052,000 |
| 11011432 |
Vertical silicon/silicon-germanium transistors with multiple threshold voltages |
Zhenxing Bi, Kangguo Cheng, Juntao Li |
2021-05-18 |
$4,116,000 |
| 11011617 |
Formation of a partial air-gap spacer |
Choonghyun Lee, Kangguo Cheng, Heng Wu |
2021-05-18 |
$4,116,000 |
| 11011622 |
Closely packed vertical transistors with reduced contact resistance |
Zhenxing Bi, Kangguo Cheng, Juntao Li |
2021-05-18 |
$4,116,000 |
| 11011643 |
Nanosheet FET including encapsulated all-around source/drain contact |
Chun Wing Yeung, Chen Zhang |
2021-05-18 |
$4,116,000 |
