Issued Patents 2021
Showing 26–50 of 56 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11004944 | Gate cut device fabrication with extended height gates | Kangguo Cheng, Andrew M. Greene, John R. Sporre | 2021-05-11 |
| 11004737 | Field effect device with reduced capacitance and resistance in source/drain contacts at reduced gate pitch | Kangguo Cheng, Chi-Chun Liu | 2021-05-11 |
| 10991797 | Self-aligned two-dimensional material transistors | Chen Zhang, Chun Wing Yeung | 2021-04-27 |
| 10991584 | Methods and structures for cutting lines or spaces in a tight pitch structure | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-04-27 |
| 10985250 | Gate cut device fabrication with extended height gates | Kangguo Cheng, Andrew M. Greene, John R. Sporre | 2021-04-20 |
| 10985315 | Resistive random-access memory | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-04-20 |
| 10985279 | Source and drain epitaxy and isolation for gate structures | Kangguo Cheng, Juntao Li, Zhenxing Bi | 2021-04-20 |
| 10985062 | Self-aligned contact cap | Kangguo Cheng | 2021-04-20 |
| 10984919 | Deposition of integrated protective material into zirconium cladding for nuclear reactors by high-velocity thermal application | Jason P. Mazzoccoli, Edward J. Lahoda | 2021-04-20 |
| 10978571 | Self-aligned contact with metal-insulator transition materials | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2021-04-13 |
| 10978572 | Self-aligned contact with metal-insulator transition materials | Choonghyun Lee, Kangguo Cheng, Juntao Li | 2021-04-13 |
| 10971584 | Low contact resistance nanowire FETs | Juntao Li, Choonghyun Lee, Kangguo Cheng | 2021-04-06 |
| 10971490 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Nicolas Loubet | 2021-04-06 |
| 10957778 | Formation of air gap spacers for reducing parasitic capacitance | Kangguo Cheng, Choonghyun Lee, Heng Wu | 2021-03-23 |
| 10957599 | Integrating extra gate VFET with single gate VFET | Zhenxing Bi, Kangguo Cheng, Junli Wang | 2021-03-23 |
| 10950492 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Kangguo Cheng, Zuoguang Liu, Sebastian Naczas, Heng Wu | 2021-03-16 |
| 10950505 | Multiple finFET formation with epitaxy separation | Kangguo Cheng | 2021-03-16 |
| 10948398 | System and method for detecting non-contact repellency of a compound candidate from Drosophila | — | 2021-03-16 |
| 10937792 | Dense vertical field effect transistor structure | Kangguo Cheng, Zhenxing Bi, Juntao Li | 2021-03-02 |
| 10937866 | Method and structure for forming silicon germanium FinFET | Kangguo Cheng, Juntao Li, Heng Wu | 2021-03-02 |
| 10937703 | Field-effect transistor having dual channels | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2021-03-02 |
| 10930563 | Formation of stacked nanosheet semiconductor devices | Kangguo Cheng, Juntao Li, Heng Wu | 2021-02-23 |
| 10925913 | Low toxic tripterygium neoglycosides, preparation method and application thereof | Bo Liu, Wei Mao, Xusheng Liu, Xiaodong Han, Wen-Li Zhou +10 more | 2021-02-23 |
| 10916657 | Tensile strain in NFET channel | Kangguo Cheng, Juntao Li, Heng Wu | 2021-02-09 |
| 10916649 | Vertical field effect transistor with reduced external resistance | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2021-02-09 |