Issued Patents 2021
Showing 1–25 of 56 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11195912 | Inner spacer for nanosheet transistors | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-12-07 |
| 11189729 | Forming a sacrificial liner for dual channel devices | Huiming Bu, Kangguo Cheng, Dechao Guo, Sivananda K. Kanakasabapathy | 2021-11-30 |
| 11183593 | Three-dimensional field effect device | Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Nicolas Loubet | 2021-11-23 |
| 11183577 | Formation of air gap spacers for reducing parasitic capacitance | Kangguo Cheng, Choonghyun Lee, Heng Wu | 2021-11-23 |
| 11183430 | Self-limiting liners for increasing contact trench volume in n-type and p-type transistors | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-11-23 |
| 11164959 | VFET devices with ILD protection | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2021-11-02 |
| 11158730 | Formation of inner spacer on nanosheet MOSFET | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2021-10-26 |
| 11142770 | Isolated oleaginous yeast | Gregory Stephanopoulos, Kangjian Qiao | 2021-10-12 |
| 11145425 | Grain boundary enhanced UN and U3Si2 pellets with improved oxidation resistance | Edward J. Lahoda, Robert L. Oelrich, Jr., Hemant Shah, Jonathan WRIGHT, Lu Cai | 2021-10-12 |
| 11145508 | Forming a fin cut in a hardmask | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2021-10-12 |
| 11120991 | Lateral semiconductor nanotube with hexagonal shape | Juntao Li, Kangguo Cheng, Choonghyun Lee | 2021-09-14 |
| 11101182 | Nanosheet transistors with different gate dielectrics and workfunction metals | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-08-24 |
| 11094824 | Forming a sacrificial liner for dual channel devices | Huiming Bu, Kangguo Cheng, Dechao Guo, Sivananda K. Kanakasabapathy | 2021-08-17 |
| 11069577 | Nanosheet transistors with different gate dielectrics and workfunction metals | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-07-20 |
| 11063129 | Self-limiting fin spike removal | Kangguo Cheng, Choonghyun Lee, Juntao Li | 2021-07-13 |
| 11049622 | Method to pressurize sic fuel cladding tube before end plug sealing by pressurization pushing spring loaded end plug | Robert L. Oelrich, Jr. | 2021-06-29 |
| 11049940 | Method and structure for forming silicon germanium finFET | Kangguo Cheng, Juntao Li, Heng Wu | 2021-06-29 |
| 11049953 | Nanosheet transistor | Kangguo Cheng, Juntao Li, Heng Wu | 2021-06-29 |
| 11043308 | Duplex accident tolerant coating for nuclear fuel rods | Edward J. Lahoda, Robert L. Oelrich, Jr., Kumar Sridharan, Benjamin Maier, Greg Johnson | 2021-06-22 |
| 11043429 | Semiconductor fins with dielectric isolation at fin bottom | Kangguo Cheng, Jay William Strane | 2021-06-22 |
| 11024547 | Method and structure for forming vertical transistors with shared gates and separate gates | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2021-06-01 |
| 11011432 | Vertical silicon/silicon-germanium transistors with multiple threshold voltages | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2021-05-18 |
| 11011617 | Formation of a partial air-gap spacer | Choonghyun Lee, Kangguo Cheng, Heng Wu | 2021-05-18 |
| 11011622 | Closely packed vertical transistors with reduced contact resistance | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2021-05-18 |
| 11011643 | Nanosheet FET including encapsulated all-around source/drain contact | Chun Wing Yeung, Chen Zhang | 2021-05-18 |