Issued Patents 2021
Showing 26–37 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11004856 | Stacked vertical transistor memory cell with epi connections | Chen Zhang, Tenko Yamashita, Kangguo Cheng | 2021-05-11 |
| 11004984 | Low resistivity epitaxially formed contact region for nanosheet external resistance reduction | Oleg Gluschenkov, Lan Yu, Ruilong Xie | 2021-05-11 |
| 10985273 | Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile | Chun Wing Yeung, Choonghyun Lee, Jingyun Zhang, Robin Hsin Kuo Chao | 2021-04-20 |
| 10985064 | Buried power and ground in stacked vertical transport field effect transistors | Chen Zhang, Kangguo Cheng, Tenko Yamashita | 2021-04-20 |
| 10971399 | Oxygen-free replacement liner for improved transistor performance | Dechao Guo, Junli Wang, Ruqiang Bao | 2021-04-06 |
| 10957778 | Formation of air gap spacers for reducing parasitic capacitance | Kangguo Cheng, Peng Xu, Choonghyun Lee | 2021-03-23 |
| 10950492 | Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap | Kangguo Cheng, Zuoguang Liu, Sebastian Naczas, Peng Xu | 2021-03-16 |
| 10943989 | Gate to source/drain leakage reduction in nanosheet transistors via inner spacer optimization | Ruqiang Bao, Junli Wang, Lan Yu, Dechao Guo | 2021-03-09 |
| 10937866 | Method and structure for forming silicon germanium FinFET | Peng Xu, Kangguo Cheng, Juntao Li | 2021-03-02 |
| 10930563 | Formation of stacked nanosheet semiconductor devices | Kangguo Cheng, Juntao Li, Peng Xu | 2021-02-23 |
| 10916657 | Tensile strain in NFET channel | Peng Xu, Kangguo Cheng, Juntao Li | 2021-02-09 |
| 10910470 | Nanosheet transistors with inner airgaps | Ruilong Xie, Alexander Reznicek, Lan Yu | 2021-02-02 |