| 11201153 |
Stacked field effect transistor with wrap-around contacts |
Ruilong Xie, Alexander Reznicek, Dechao Guo |
2021-12-14 |
| 11183558 |
Nanosheet transistor having partially self-limiting bottom isolation extending into the substrate and under the source/drain and gate regions |
Veeraraghavan S. Basker, Alexander Reznicek, Junli Wang |
2021-11-23 |
| 11177370 |
Vertical field effect transistor with self-aligned source and drain top junction |
Ruilong Xie, Alexander Reznicek, Chen Zhang |
2021-11-16 |
| 11171204 |
High thermal budget compatible punch through stop integration using doped glass |
Kangguo Cheng, Sanjay C. Mehta, Xin Miao |
2021-11-09 |
| 11164793 |
Reduced source/drain coupling for CFET |
Ruilong Xie, Alexander Reznicek, Chanro Park |
2021-11-02 |
| 11164787 |
Two-stage top source drain epitaxy formation for vertical field effect transistors enabling gate last formation |
Alexander Reznicek, Zuoguang Liu, Ruilong Xie |
2021-11-02 |
| 11158636 |
Nanosheet device integrated with a FINFET transistor |
Ruilong Xie, Alexander Reznicek |
2021-10-26 |
| 11152460 |
High thermal budget compatible punch through stop integration using doped glass |
Kangguo Cheng, Sanjay C. Mehta, Xin Miao |
2021-10-19 |
| 11069684 |
Stacked field effect transistors with reduced coupling effect |
Ruilong Xie, Dechao Guo, Alexander Reznicek |
2021-07-20 |
| 11062937 |
Dielectric isolation for nanosheet devices |
Kangguo Cheng, Ruilong Xie, Tenko Yamashita |
2021-07-13 |
| 11056570 |
Nanosheet transistor with dual inner airgap spacers |
Ruilong Xie, Kangguo Cheng, Tenko Yamashita |
2021-07-06 |
| 11055610 |
Circuit for CMOS based resistive processing unit |
Yulong Li, Paul M. Solomon, Effendi Leobandung, Seyoung Kim |
2021-07-06 |
| 11055611 |
Circuit for CMOS based resistive processing unit |
Yulong Li, Paul M. Solomon, Effendi Leobandung, Seyoung Kim |
2021-07-06 |
| 11056386 |
Two-dimensional (2D) self-aligned contact (or via) to enable further device scaling |
Junli Wang, Veeraraghavan S. Basker, Alexander Reznicek |
2021-07-06 |
| 11038041 |
Composite spacer enabling uniform doping in recessed fin devices |
Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita |
2021-06-15 |
| 11018240 |
Vertical field effect transistor with reduced parasitic capacitance |
Kangguo Cheng, Ruilong Xie, Tenko Yamashita |
2021-05-25 |
| 11011528 |
Asymmetric gate edge spacing for SRAM structures |
Alexander Reznicek, Ruilong Xie, Chen Zhang |
2021-05-18 |
| 10998233 |
Mechanically stable complementary field effect transistors |
Ruilong Xie, Alexander Reznicek, Chen Zhang |
2021-05-04 |
| 10957761 |
Electrical isolation for nanosheet transistor devices |
Alexander Reznicek, Veeraraghavan S. Basker, Junli Wang |
2021-03-23 |
| 10916471 |
Dual silicide liner flow for enabling low contact resistance |
Praneet Adusumilli, Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita |
2021-02-09 |
| 10903365 |
Transistors with uniform source/drain epitaxy |
Kangguo Cheng, Ruilong Xie, Tenko Yamashita |
2021-01-26 |
| 10896979 |
Compact vertical injection punch through floating gate analog memory and a manufacture thereof |
Effendi Leobandung, Yulong Li, Tak H. Ning, Paul M. Solomon |
2021-01-19 |
