Issued Patents 2021
Showing 51–63 of 63 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10930756 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Kangguo Cheng, Nicolas Loubet, Xin Miao, Wenyu Xu | 2021-02-23 |
| 10930778 | Vertical transistor devices with composite high-K and low-K spacers with a controlled top junction | Kangguo Cheng, Xin Miao, Wenyu Xu | 2021-02-23 |
| 10916640 | Approach to high-k dielectric feature uniformity | Tenko Yamashita, Chun Wing Yeung | 2021-02-09 |
| 10910482 | Nanosheet with changing SiGe percentage for SiGe lateral recess | Kangguo Cheng, Xin Miao, Wenyu Xu | 2021-02-02 |
| 10910372 | Fin field effect transistor devices with modified spacer and gate dielectric thicknesses | Xin Miao, Kangguo Cheng, Wenyu Xu | 2021-02-02 |
| 10902910 | Phase change memory (PCM) with gradual reset characteristics | Kangguo Cheng, Xin Miao, Wenyu Xu | 2021-01-26 |
| 10903358 | Vertical fin field effect transistor with reduced gate length variations | Kangguo Cheng, Xin Miao, Wenyu Xu | 2021-01-26 |
| 10903337 | Air gap spacer with wrap-around etch stop layer under gate spacer | Kangguo Cheng, Xin Miao, Wenyu Xu, Peng Xu | 2021-01-26 |
| 10903212 | Fin field effect transistor devices with modified spacer and gate dielectric thicknesses | Xin Miao, Kangguo Cheng, Wenyu Xu | 2021-01-26 |
| 10903123 | High threshold voltage FET with the same fin height as regular threshold voltage vertical FET | Xin Miao, Kangguo Cheng, Wenyu Xu | 2021-01-26 |
| 10896851 | Vertically stacked transistors | Kangguo Cheng, Tenko Yamahita, Chun Wing Yeung | 2021-01-19 |
| 10886391 | Single-electron transistor with wrap-around gate | Kangguo Cheng, Xin Miao, Wenyu Xu | 2021-01-05 |
| 10886384 | Fabrication of a vertical fin field effect transistor (vertical finFET) with a self-aligned gate and fin edges | Kangguo Cheng, Xin Miao, Wenyu Xu | 2021-01-05 |