| 11201242 |
Structure to enable titanium contact liner on pFET source/drain regions |
Veeraraghavan S. Basker, Nicole S. Munro, Alexander Reznicek |
2021-12-14 |
| 11201212 |
MOSFET with ultra low drain leakage |
Joel P. de Souza, Jeehwan Kim, Devendra K. Sadana |
2021-12-14 |
| 11121304 |
Junction fabrication method for forming qubits |
Vivekananda P. Adiga, Benjamin Wymore, Martin O. Sandberg |
2021-09-14 |
| 11094842 |
Heterojunction photovoltaic device and fabrication method |
Stephen W. Bedell, Bahman Hekmatshoar-Tabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi |
2021-08-17 |
| 11011655 |
Three-dimensional conductive electrode for solar cell |
Augustin J. Hong, Jeehwan Kim, Devendra K. Sadana |
2021-05-18 |
| 10957694 |
Epitaxial oxide fin segments to prevent strained semiconductor fin end relaxation |
Karthik Balakrishnan, Sivananda K. Kanakasabapathy, Alexander Reznicek |
2021-03-23 |
| 10937864 |
Leakage-free implantation-free ETSOI transistors |
Joel P. de Souza, Jeehwan Kim, Devendra K. Sadana |
2021-03-02 |
| 10937789 |
Nanosheet eDRAM |
Alexander Reznicek, Muthumanickam Sankarapandian, Donald F. Canaperi |
2021-03-02 |
| 10892333 |
Method of making a gallium nitride device |
Stephen W. Bedell, Paul A. Lauro, Devendra K. Sadana |
2021-01-12 |
