Issued Patents 2021
Showing 51–75 of 134 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11088139 | Asymmetric threshold voltage VTFET with intrinsic dual channel epitaxy | Choonghyun Lee, Jingyun Zhang, Takashi Ando, Pouya Hashemi | 2021-08-10 |
| 11088288 | Stacked-nanosheet semiconductor structures with support structures | Ruilong Xie, Jingyun Zhang, Xin Miao | 2021-08-10 |
| 11088280 | Transistor and method of forming same | Veeraraghavan S. Basker, Nicolas L. Breil, Oleg Gluschenkov, Shogo Mochizuki | 2021-08-10 |
| 11088205 | High-density field-enhanced ReRAM integrated with vertical transistors | Takashi Ando, Pouya Hashemi | 2021-08-10 |
| 11088026 | Wimpy device by selective laser annealing | Kangguo Cheng, Nicolas Loubet, Xin Miao | 2021-08-10 |
| 11081542 | Buried MIM capacitor structure with landing pads | Praneet Adusumilli, Oscar van der Straten, Joshua M. Rubin | 2021-08-03 |
| 11081569 | Resistor loaded inverter structures | Karthik Balakrishnan, Bahman Hekmatshoartabari, Tak H. Ning | 2021-08-03 |
| 11081543 | Multi-spheroid BEOL capacitor | Praneet Adusumilli, Shanti Pancharatnam, Oscar van der Straten | 2021-08-03 |
| 11081404 | Source/drain for gate-all-around devices | Jingyun Zhang, Takashi Ando, Choonghyun Lee | 2021-08-03 |
| 11075301 | Nanosheet with buried gate contact | Jingyun Zhang, Choonghyun Lee, Takashi Ando, Pouya Hashemi | 2021-07-27 |
| 11075338 | Resistive memory cell structure | Takashi Ando, Bahman Hekmatshoartabari | 2021-07-27 |
| 11075334 | Spin-orbit-torque magneto-resistive random access memory with stepped bottom electrode | Ruilong Xie, Heng Wu, Lan Yu | 2021-07-27 |
| 11075273 | Nanosheet electrostatic discharge structure | Xin Miao, Choonghyun Lee, Jingyun Zhang | 2021-07-27 |
| 11069684 | Stacked field effect transistors with reduced coupling effect | Ruilong Xie, Chun-Chen Yeh, Dechao Guo | 2021-07-20 |
| 11069688 | Vertical transistor with eDRAM | — | 2021-07-20 |
| 11069809 | Soi FinFET fins with recessed fins and epitaxy in source drain region | Shogo Mochizuki, Veeraraghavan S. Basker, Nicolas L. Breil, Oleg Gluschenkov | 2021-07-20 |
| 11069854 | Laser anneal for MRAM encapsulation enhancement | Michael Rizzolo, Oscar van der Straten, Oleg Gluschenkov | 2021-07-20 |
| 11063134 | Vertical transistors with top spacers | Jingyun Zhang, Xin Miao, Choonghyun Lee | 2021-07-13 |
| 11062955 | Vertical transistors having uniform channel length | Choonghyun Lee, Takashi Ando, Jingyun Zhang, Pouya Hashemi | 2021-07-13 |
| 11061146 | Nanosheet radiation dosimeter | Jeng-Bang Yau, Karthik Balakrishnan, Bahman Hekmatshoartabari | 2021-07-13 |
| 11056386 | Two-dimensional (2D) self-aligned contact (or via) to enable further device scaling | Junli Wang, Veeraraghavan S. Basker, Chun-Chen Yeh | 2021-07-06 |
| 11043587 | Fabrication of vertical fin transistor with multiple threshold voltages | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2021-06-22 |
| 11043598 | Vertical field effect transistor with low-resistance bottom source-drain contact | Choonghyun Lee, Soon-Cheon Seo, Injo Ok | 2021-06-22 |
| 11037986 | Stacked resistive memory with individual switch control | Takashi Ando, Jingyun Zhang, Pouya Hashemi, Choonghyun Lee | 2021-06-15 |
| 11038103 | Tightly integrated 1T1R ReRAM for planar technology | Takashi Ando, Pouya Hashemi | 2021-06-15 |