Issued Patents 2021
Showing 1–25 of 39 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11195993 | Encapsulation topography-assisted self-aligned MRAM top contact | Nicholas Anthony Lanzillo, Benjamin D. Briggs, Lawrence A. Clevenger | 2021-12-07 |
| 11177437 | Alignment through topography on intermediate component for memory device patterning | Hao Tang, Injo Ok, Theodorus E. Standaert | 2021-11-16 |
| 11164779 | Bamboo tall via interconnect structures | Chih-Chao Yang, Theodorus E. Standaert | 2021-11-02 |
| 11164377 | Motion-controlled portals in virtual reality | Aldis Sipolins, Lawrence A. Clevenger, Benjamin D. Briggs, Christopher J. Penny, Patrick Watson | 2021-11-02 |
| 11158584 | Selective CVD alignment-mark topography assist for non-volatile memory | Chih-Chao Yang, Lawrence A. Clevenger, Benjamin D. Briggs | 2021-10-26 |
| 11138890 | Secure access for drone package delivery | Benjamin D. Briggs, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Christopher J. Penny, Aldis Sipolins | 2021-10-05 |
| 11132712 | Method for using 3D positional spatial olfaction for virtual marketing | Benjamin D. Briggs, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Christoper J. Penny, Aldis Sipolins | 2021-09-28 |
| 11121174 | MRAM integration into the MOL for fast 1T1M cells | Alexander Reznicek, Ruilong Xie | 2021-09-14 |
| 11121173 | Preserving underlying dielectric layer during MRAM device formation | Ashim Dutta | 2021-09-14 |
| 11081643 | Bevel metal removal using ion beam etch | Ashim Dutta, Saba Zare, Theodorus E. Standaert, Daniel C. Edelstein | 2021-08-03 |
| 11074387 | Automated method for integrated analysis of back end of the line yield, line resistance/capacitance and process performance | Prasad Bhosale, Chih-Chao Yang | 2021-07-27 |
| 11069854 | Laser anneal for MRAM encapsulation enhancement | Oscar van der Straten, Alexander Reznicek, Oleg Gluschenkov | 2021-07-20 |
| 11063089 | Resistive memory device with meshed electrodes | Takashi Ando, Lawrence A. Clevenger, Chih-Chao Yang | 2021-07-13 |
| 11056429 | Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device | Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Huai Huang, Christopher J. Penny | 2021-07-06 |
| 11049744 | Optimizing semiconductor binning by feed-forward process adjustment | Benjamin D. Briggs, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Theodorus E. Standaert, James H. Stathis | 2021-06-29 |
| 11031250 | Semiconductor structures of more uniform thickness | Mona A. Ebrish, Son V. Nguyen, Raghuveer R. Patlolla, Donald F. Canaperi | 2021-06-08 |
| 11031542 | Contact via with pillar of alternating layers | Chih-Chao Yang, Daniel C. Edelstein, Theodorus E. Standaert | 2021-06-08 |
| 11018090 | Selective CVD alignment-mark topography assist for non-volatile memory | Chih-Chao Yang, Lawrence A. Clevenger, Benjamin D. Briggs | 2021-05-25 |
| 11004735 | Conductive interconnect having a semi-liner and no top surface recess | Cornelius Brown Peethala, Oscar van der Straten, Chih-Chao Yang | 2021-05-11 |
| 11004790 | Method of manufacturing an interconnect without dielectric exclusion zones by thermal decomposition of a sacrificial filler material | Benjamin D. Briggs, Lawrence A. Clevenger, Christopher J. Penny | 2021-05-11 |
| 10978393 | Hybrid dielectric scheme for varying liner thickness and manganese concentration | Benjamin D. Briggs, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Takeshi Nogami, Christopher J. Penny | 2021-04-13 |
| 10978388 | Skip via for metal interconnects | Hari Prasad Amanapu, Prasad Bhosale, Nicholas V. LiCausi, Lars Liebmann, James Jay McMahon +1 more | 2021-04-13 |
| 10971030 | Remote physical training | Benjamin D. Briggs, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Christopher J. Penny, Aldis Sipolins | 2021-04-06 |
| 10964588 | Selective ILD deposition for fully aligned via with airgap | Christopher J. Penny, Benjamin D. Briggs, Huai Huang, Lawrence A. Clevenger, Hosadurga Shobha | 2021-03-30 |
| 10957581 | Self aligned via and pillar cut for at least a self aligned double pitch | Benjamin D. Briggs, Lawrence A. Clevenger, Terry A. Spooner, Theodorus E. Standaert | 2021-03-23 |