| 11189693 |
Transistor having reduced contact resistance |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2021-11-30 |
$2,996,000 |
| 11177437 |
Alignment through topography on intermediate component for memory device patterning |
Hao Tang, Michael Rizzolo, Injo Ok |
2021-11-16 |
$1,912,000 |
| 11164779 |
Bamboo tall via interconnect structures |
Chih-Chao Yang, Michael Rizzolo |
2021-11-02 |
$2,126,000 |
| 11145658 |
Semiconductor structures with deep trench capacitor and methods of manufacture |
Kevin K. Chan, Sivananda K. Kanakasabapathy, Babar A. Khan, Masaharu Kobayashi, Effendi Leobandung +1 more |
2021-10-12 |
$3,967,000 |
| 11145813 |
Bottom electrode for semiconductor memory device |
Chih-Chao Yang, Daniel C. Edelstein |
2021-10-12 |
$3,967,000 |
| 11121032 |
Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2021-09-14 |
$2,674,000 |
| 11081643 |
Bevel metal removal using ion beam etch |
Ashim Dutta, Saba Zare, Michael Rizzolo, Daniel C. Edelstein |
2021-08-03 |
$4,187,000 |
| 11056493 |
Semiconductor structures with deep trench capacitor and methods of manufacture |
Kevin K. Chan, Sivananda K. Kanakasabapathy, Babar A. Khan, Masaharu Kobayashi, Effendi Leobandung +1 more |
2021-07-06 |
$5,313,000 |
| 11049744 |
Optimizing semiconductor binning by feed-forward process adjustment |
Benjamin D. Briggs, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Michael Rizzolo, James H. Stathis |
2021-06-29 |
$5,149,000 |
| 11031542 |
Contact via with pillar of alternating layers |
Chih-Chao Yang, Daniel C. Edelstein, Michael Rizzolo |
2021-06-08 |
$4,452,000 |
| 10998230 |
Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2021-05-04 |
$7,263,000 |
| 10998227 |
Metal insulator metal capacitor with extended capacitor plates |
Chih-Chao Yang |
2021-05-04 |
$7,263,000 |
| 10985056 |
Structure and method to improve FAV RIE process margin and Electromigration |
Benjamin D. Briggs, Joe Lee |
2021-04-20 |
$24,642,000 |
| 10971601 |
Replacement metal gate structures |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2021-04-06 |
$3,234,000 |
| 10971398 |
Cobalt interconnect structure including noble metal layer |
Chih-Chao Yang |
2021-04-06 |
$3,234,000 |
| 10957581 |
Self aligned via and pillar cut for at least a self aligned double pitch |
Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo, Terry A. Spooner |
2021-03-23 |
$2,115,000 |
| 10957584 |
Structure and method to improve FAV RIE process margin and electromigration |
Benjamin D. Briggs, Joe Lee |
2021-03-23 |
$27,105,000 |
| 10957582 |
Self aligned via and pillar cut for at least a self aligned double pitch |
Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo, Terry A. Spooner |
2021-03-23 |
$2,115,000 |
| 10930754 |
Replacement metal gate structures |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2021-02-23 |
$3,028,000 |
| 10916660 |
Vertical transistor with a body contact for back-biasing |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2021-02-09 |
$3,536,000 |
| 10903338 |
Vertical FET with shaped spacer to reduce parasitic capacitance |
Junli Wang, Kangguo Cheng, Veeraraghavan S. Basker |
2021-01-26 |
$1,788,000 |
| 10892404 |
Sacrificial buffer layer for metal removal at a bevel edge of a substrate |
Ashim Dutta, Saba Zare, Michael Rizzolo, Daniel C. Edelstein |
2021-01-12 |
$3,912,000 |
