Issued Patents 2021
Showing 101–125 of 134 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10943787 | Confined work function material for gate-all around transistor devices | Jingyun Zhang, Choonghyun Lee, Takashi Ando, Pouya Hashemi | 2021-03-09 |
| 10942072 | Nanoscale magnetic tunnel junction arrays for sub-micrometer resolution pressure sensor | Chandrasekharan Kothandaraman, Eric Raymond Evarts, Virat Vasav Mehta, Pouya Hashemi | 2021-03-09 |
| 10937789 | Nanosheet eDRAM | Muthumanickam Sankarapandian, Donald F. Canaperi, Keith E. Fogel | 2021-03-02 |
| 10937903 | Twin gate field effect diode | Karthik Balakrishnan, Pouya Hashemi, Bahman Hekmatshoartabari | 2021-03-02 |
| 10937898 | Lateral bipolar junction transistor with dual base region | Pouya Hashemi, Bahman Hekmatshoartabari, Karthik Balakrishnan, Jeng-Bang Yau | 2021-03-02 |
| 10937883 | Vertical transport FETs having a gradient threshold voltage | Choonghyun Lee, Takashi Ando, Jingyun Zhang, Pouya Hashemi | 2021-03-02 |
| 10937863 | Fabrication of perfectly symmetric gate-all-around FET on suspended nanowire using interface interaction | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2021-03-02 |
| 10937862 | Nanosheet substrate isolated source/drain epitaxy via airgap | Choonghyun Lee, Xin Miao, Jingyun Zhang | 2021-03-02 |
| 10937828 | Fabricating embedded magnetoresistive random access memory device with v-shaped magnetic tunnel junction profile | Pouya Hashemi, Matthias Georg Gottwald, Chandrasekharan Kothandaraman | 2021-03-02 |
| 10930779 | Method of forming a vertical transistor pass gate device | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2021-02-23 |
| 10923471 | Minimizing shorting between FinFET epitaxial regions | Kangguo Cheng, Balasubramanian Pranatharthiharan, Charan V. V. S. Surisetty | 2021-02-16 |
| 10916552 | Stacked FinFET mask-programmable read only memory containing spaced apart upper and lower threshold voltage setting layers | Karthik Balakrishnan | 2021-02-09 |
| 10916659 | Asymmetric threshold voltage FinFET device by partial channel doping variation | Choonghyun Lee, Pouya Hashemi, Takashi Ando, Jingyun Zhang | 2021-02-09 |
| 10916651 | Body contact in fin field effect transistor design | Tak H. Ning, Jeng-Bang Yau, Bahman Hekmatshoartabari | 2021-02-09 |
| 10916629 | Nanosheet-CMOS EPROM device with epitaxial oxide charge storage region | Jeng-Bang Yau, Tak H. Ning, Ghavam G. Shahidi | 2021-02-09 |
| 10916537 | Tight integrated vertical transistor dual diode structure for electrostatic discharge circuit protector | Karthik Balakrishnan, Bahman Hekmatshoartabari, Jeng-Bang Yau | 2021-02-09 |
| 10910470 | Nanosheet transistors with inner airgaps | Heng Wu, Ruilong Xie, Lan Yu | 2021-02-02 |
| 10910435 | Stackable symmetrical operation memory bit cell structure with bidirectional selectors | Bahman Hekmatshoartabari, Oleg Gluschenkov, Yasir Sulehria | 2021-02-02 |
| 10903210 | Sub-fin doped bulk fin field effect transistor (FinFET), Integrated Circuit (IC) and method of manufacture | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2021-01-26 |
| 10903417 | MTJ containing device with replacement top electrode | Pouya Hashemi, Nathan P. Marchack, Bruce B. Doris | 2021-01-26 |
| 10903360 | Vertically integrated memory cells with complementary pass transistor selectors | Bahman Hekmatshoartabari, Ruilong Xie, Jingyun Zhang | 2021-01-26 |
| 10903275 | Three-dimensional stackable multi-layer cross-point memory with single-crystalline bipolar junction transistor selectors | Bahman Hekmatshoartabari, Tak H. Ning | 2021-01-26 |
| 10900952 | Dual surface charge sensing biosensor | Jeng-Bang Yau, Bahman Hekmatshoartabari | 2021-01-26 |
| 10896962 | Asymmetric threshold voltages in semiconductor devices | Takashi Ando, Jingyun Zhang, Choonghyun Lee, Pouya Hashemi | 2021-01-19 |
| 10896971 | Vertical transistor with body contact fabrication | Tak H. Ning, Bahman Hekmatshoartabari, Jeng-Bang Yau | 2021-01-19 |