Issued Patents 2021
Showing 126–134 of 134 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10896912 | Stacked vertical transistor erasable programmable read-only memory and programmable inverter devices | Karthik Balakrishnan, Tak H. Ning, Bahman Hekmatshoartabari | 2021-01-19 |
| 10892346 | Bipolar junction transistor (BJT) for liquid flow biosensing applications without a reference electrode and large sensing area | Tak H. Ning, Sufi Zafar, Oscar van der Straten | 2021-01-12 |
| 10892336 | Wrap-around-contact structure for top source/drain in vertical FETS | Choonghyun Lee, Christopher J. Waskiewicz, Hemanth Jagannathan | 2021-01-12 |
| 10886368 | I/O device scheme for gate-all-around transistors | Jingyun Zhang, Choonghyun Lee, Xin Miao | 2021-01-05 |
| 10886403 | Close proximity and lateral resistance reduction for bottom source/drain epitaxy in vertical transistor devices | Shogo Mochizuki, Jingyun Zhang, Xin Miao | 2021-01-05 |
| 10886385 | Semiconductor structures having increased channel strain using fin release in gate regions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Kern Rim | 2021-01-05 |
| 10886333 | Memory structure including gate controlled three-terminal metal oxide components | Bahman Hekmatshoartabari, Karthik Balakrishnan | 2021-01-05 |
| 10886275 | Nanosheet one transistor dynamic random access device with silicon/silicon germanium channel and common gate structure | Karthik Balakrishnan, Bahman Hekmatshoartabari, Clint Jason Oteri | 2021-01-05 |
| 10886369 | Formation of self-limited inner spacer for gate-all-around nanosheet FET | Jingyun Zhang, Takashi Ando, Choonghyun Lee, Pouya Hashemi | 2021-01-05 |